In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

被引:9
作者
Tran, Tuan T. [1 ]
Lavoie, Christian [2 ]
Zhang, Zhen [3 ]
Primetzhofer, Daniel [1 ]
机构
[1] Uppsala Univ, Dept Phys & Astron, Angstrom Lab, Box 516, SE-75120 Uppsala, Sweden
[2] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Uppsala Univ, Dept Elect Engn, Angstrom Lab, Solid State Elect, SE-75121 Uppsala, Sweden
关键词
Ultrathin; Nickel silicide; Epitaxial silicide; In-situ characterization; High-resolution ion scattering; GROWTH;
D O I
10.1016/j.apsusc.2020.147781
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si (100) using in-situ high-resolution ion scattering and high-resolution transmission electron microscopy. We show the transition to occur in discrete steps, in which an intermediate phase is observed within a narrow range of temperature from 230 degrees C to 290 degrees C. The film composition of this intermediate phase is found to be 50% Ni:50% Si, without evidence for long-range structure, indicating the film to be a homogeneous monosilicide NiSi phase. The final phase is resemblant of the cubic disilicide NiSi2, but with slightly off-stoichiometric composition of 38% Ni and 62% Si. Along the [100] axis, the lattices of the film and the substrate are found in perfect alignment. Due to the epitaxial growth of the silicide, a contraction of the c lattice constant of the film by 0.7-1% is detected.
引用
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页数:7
相关论文
共 24 条
  • [1] DISORDERED INTERMIXING AT THE PLATINUM-SILICON INTERFACE DEMONSTRATED BY HIGH-RESOLUTION CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, AUGER-ELECTRON SPECTROSCOPY, AND MEV ION CHANNELING
    ABELSON, JR
    KIM, KB
    MERCER, DE
    HELMS, CR
    SINCLAIR, R
    SIGMON, TW
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 689 - 692
  • [2] Homogeneous Nucleation of Epitaxial CoSi2 and NiSi in Si Nanowires
    Chou, Yi-Chia
    Wu, Wen-Wei
    Chen, Lih-Juann
    Tu, King-Ning
    [J]. NANO LETTERS, 2009, 9 (06) : 2337 - 2342
  • [3] Kinetics of formation of silicides: A review
    d'Heurle, F. M.
    Gas, P.
    [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) : 205 - 221
  • [4] The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation
    Gaudet, S.
    Desjardins, P.
    Lavoie, C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)
  • [5] Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance
    Gaudet, S.
    Coia, C.
    Desjardins, P.
    Lavoie, C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)
  • [6] Keyser K.D., 2010, APPL PHYS LETT, V96
  • [7] Towards implementation of a nickel silicide process for CMOS technologies
    Lavoie, C
    d'Heurle, FM
    Detavernier, C
    Cabral, C
    [J]. MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) : 144 - 157
  • [8] Lavoie C., 2008, HDB SEMICONDUCTOR MA
  • [9] The growth and applications of silicides for nanoscale devices
    Lin, Yung-Chen
    Chen, Yu
    Huang, Yu
    [J]. NANOSCALE, 2012, 4 (05) : 1412 - 1421
  • [10] New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector
    Linnarsson, M. K.
    Hallen, A.
    Astrom, J.
    Primetzhofer, D.
    Legendre, S.
    Possnert, G.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2012, 83 (09)