Enhancing the Cu2ZnSnS4 solar cell efficiency by back contact modification: Inserting a thin TiB2 intermediate layer at Cu2ZnSnS4/Mo interface

被引：155

作者：

Liu, Fangyang ^{[1
]}

Sun, Kaiwen ^{[2
]}

Li, Wei ^{[1
]}

Yan, Chang ^{[1
]}

Cui, Hongtao ^{[1
]}

Jiang, Liangxing ^{[2
]}

Hao, Xiaojing ^{[1
]}

Green, Martin A. ^{[1
]}

机构：

[1] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

[2] Cent S Univ, Sch Met & Environm, Changsha 410083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期

基金：

澳大利亚研究理事会;

关键词：

ELECTRICAL-PROPERTIES; FILMS; BOUNDARIES;

D O I：

10.1063/1.4863736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, TiB2 thin films have been employed as intermediate layer between absorber and back contact in Cu2ZnSnS4 (CZTS) thin film solar cells for interface optimization. It is found that the TiB2 intermediate layer can significantly inhibit the formation of MoS2 layer at absorber/back contact interface region, greatly reduces the series resistance and thereby increases the device efficiency by short current density (Jsc) and fill factor boost. However, introducing TiB2 degrades the crystal quality of absorber, which is detrimental to device performance especially Voc. The careful control of the thickness of TiB2 intermediate layer is required to ensure both MoS2 with minimal thickness and CZTS absorber with large grain microstructure according to the absorber growth process. (C) 2014 AIP Publishing LLC.

引用

页数：5

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