Solid phase epitaxial growth of 3C-SiC thin film on Si and annihilation of nanopores

被引：9

作者：

Goswami, R. ^{[1
]}

Li, C. H. ^{[1
]}

Jernigan, G. G. ^{[1
]}

Thompson, P. E. ^{[1
]}

Hellberg, C. S. ^{[1
]}

Jonker, B. T. ^{[1
]}

机构：

[1] Naval Res Lab, Div Mat Sci & Technol, Washington, DC 20375 USA

来源：

ACTA MATERIALIA | 2014年 / 65卷

关键词：

3C-SiC thin film; Pores/pits; Transmission electron microscopy; MOLECULAR-BEAM EPITAXY; LOW-TEMPERATURE GROWTH; CHEMICAL-VAPOR-DEPOSITION; HETEROEPITAXIAL GROWTH; WAFERS;

D O I：

10.1016/j.actamat.2013.11.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The solid phase epitaxial growth of 3C-SiC, 2-5 nm thick, on (001) Si by annealing 1-2 nm carbon overlayers has been investigated by transmission electron microscopy and X-ray photoelectron spectroscopy. High-temperature annealing in the range of 850-950 degrees C results in solid phase cube-on-cube epitaxial growth of SiC films. This is accompanied by the formation of nanopores below the SiC epilayer in the Si substrate. Such nanopores, formed with truncated octahedron morphology consisting of {111} and (001) facets, are annihilated by diffusion of Ge deposited onto the SiC surface. It was also observed that the Ge islands on top of SiC exhibit a cube-on-cube orientation relation with SiC and the Ge overlayer reduces the density of faults in SiC considerably. Published by Elsevier Ltd. on behalf of Acta Materialia Inc.

引用

页码：418 / 424

页数：7

共 32 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].

ADDAMIANO, A ;

SPRAGUE, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527

[2] Tight-binding calculations of the band structure and total energies of the various polytypes of silicon carbide [J].

Bernstein, N ;

Gotsis, HJ ;

Papaconstantopoulos, DA ;

Mehl, MJ .

PHYSICAL REVIEW B, 2005, 71 (07)

[3] ATOMIC-RESOLUTION CHEMICAL-ANALYSIS USING A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE [J].

BROWNING, ND ;

CHISHOLM, MF ;

PENNYCOOK, SJ .

NATURE, 1993, 366 (6451) :143-146

[4]

Cahn JW, 1982, P INT C SOL SOL PHAS

[5] LOW-TEMPERATURE GROWTH OF SIC THIN-FILMS ON SI AND 6H-SIC BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY [J].

FISSEL, A ;

SCHROTER, B ;

RICHTER, W .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3182-3184

[6] THE SUPERHEATING AND THE CRYSTALLOGRAPHY OF EMBEDDED PB PARTICLES IN FCC AL, CU AND NI MATRICES [J].

GOSWAMI, R ;

CHATTOPADHYAY, K .

ACTA METALLURGICA ET MATERIALIA, 1995, 43 (07) :2837-2847

[7] New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment [J].

Kukushkin, S. A. ;

Osipov, A. V. .

PHYSICS OF THE SOLID STATE, 2008, 50 (07) :1238-1245

[8] SIC FILM FORMATION ON SI(001) BY REACTION WITH C2H2 BEAMS [J].

KUSUNOKI, I ;

HIROI, M ;

SATO, T ;

IGARI, Y ;

TOMODA, S .

APPLIED SURFACE SCIENCE, 1990, 45 (03) :171-187

[9] EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS [J].

LIAW, P ;

DAVIS, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :642-648

[10] Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilane [J].

Madapura, S ;

Steckl, AJ ;

Loboda, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (03) :1197-1202

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