Resistive switching of Pt/ZrO2/YBa2Cu3O7 sandwiches

被引：1
|
作者：
Wen, Zheng [1 ,2 ,3 ]
Li, Kun [1 ,2 ]
Wu, Di [1 ,2 ]
Li, Aidong [1 ,2 ]
机构：
[1] Nanjing Univ, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Coll Engn & Appl Sci, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[3] Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2014年 / 65卷 / 03期
关键词：
RESET STATISTICS; MEMORY; DEVICES;
D O I：
10.1051/epjap/2014130304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistive switching characteristics of Pt/ZrO2/YBa2Cu3O7 sandwiches are investigated for nonvolatile memory applications. Reproducible bipolar resistance switching with an on/off current ratio about 60 and long data retention are achieved. The conduction mechanism obeys Schottky emission in the low resistance state, while Poole-Frankel conduction is predominant in the high resistance state. The resistance switching of Pt/ZrO2/YBa2Cu3O7 sandwiches can be ascribed to migration and redistribution of oxygen vacancies around the ZrO2/YBa2Cu3O7 interface, which switches the conduction between the interfacecontrolled and the bulk-controlled mechanisms.
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页数：5
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