Resistive switching of Pt/ZrO2/YBa2Cu3O7 sandwiches

被引：1
|
作者：
Wen, Zheng [1 ,2 ,3 ]
Li, Kun [1 ,2 ]
Wu, Di [1 ,2 ]
Li, Aidong [1 ,2 ]
机构：
[1] Nanjing Univ, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Coll Engn & Appl Sci, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[3] Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2014年 / 65卷 / 03期
关键词：
RESET STATISTICS; MEMORY; DEVICES;
D O I：
10.1051/epjap/2014130304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistive switching characteristics of Pt/ZrO2/YBa2Cu3O7 sandwiches are investigated for nonvolatile memory applications. Reproducible bipolar resistance switching with an on/off current ratio about 60 and long data retention are achieved. The conduction mechanism obeys Schottky emission in the low resistance state, while Poole-Frankel conduction is predominant in the high resistance state. The resistance switching of Pt/ZrO2/YBa2Cu3O7 sandwiches can be ascribed to migration and redistribution of oxygen vacancies around the ZrO2/YBa2Cu3O7 interface, which switches the conduction between the interfacecontrolled and the bulk-controlled mechanisms.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure
    Li, Yingtao
    Yuan, Peng
    Fu, Liping
    Li, Rongrong
    Gao, Xiaoping
    Tao, Chunlan
    NANOTECHNOLOGY, 2015, 26 (39)
  • [22] Methods of controlling operation modes in Pt/TaO x /Ta2O5/Pt resistive switching cells
    Miyatani, Toshiki
    Nishi, Yusuke
    Kimoto, Tsunenobu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SM)
  • [23] Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems
    Ismail, Muhammad
    Abbas, Haider
    Choi, Changhwan
    Kim, Sungjun
    APPLIED SURFACE SCIENCE, 2020, 529
  • [24] Resistive switching behavior of LaNiO3/Nb:SrTiO3 and LaNiO3/ZrO2/Nb: SrTiO3 structures
    Bian, Weibai
    Zhang, Ruixuan
    Chen, Xiaohui
    Jia, Jiqiang
    MATERIALS TODAY COMMUNICATIONS, 2024, 40
  • [25] Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack
    Ryu, Hojeong
    Kim, Sungjun
    NANOMATERIALS, 2020, 10 (10) : 1 - 11
  • [26] Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions
    Zhang, H. J.
    Zhang, X. P.
    Shi, J. P.
    Tian, H. F.
    Zhao, Y. G.
    APPLIED PHYSICS LETTERS, 2009, 94 (09)
  • [27] Improved resistive switching characteristics of solution processed ZrO2/SnO2 bilayer RRAM via oxygen vacancy differential
    Choi, Kihwan
    Pak, James Jungho
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (04)
  • [28] Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes
    Cao, Yuyuan
    Di, Qitao
    Zhu, Lin
    Li, Aidong
    Wu, Di
    ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2015, 2015
  • [29] Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices
    Li, Yingtao
    Li, Xiaoyan
    Fu, Liping
    Chen, Rongbo
    Wang, Hong
    Gao, Xiaoping
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (12) : 5390 - 5394
  • [30] Resistive switching behaviour in ZrO2-CNT nanocomposite film
    Sharma, Aman
    Faraz, Mohd
    Khare, Neeraj
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2024, 130 (08):
12345