Band to Mott insulator transition in the ionic Hubbard model

被引：0
|
作者：
Brune, P [1 ]
Kampf, AP [1 ]
机构：
[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
来源：
HIGH PERFORMANCE COMPUTING IN SCIENCE AND ENGINEERING 01 | 2002年
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D O I：
暂无
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
We investigate the ground state phase diagram of the one-dimensional "ionic" Hubbard model with an alternating periodic potential at half filling by numerical diagonalization of finite systems with the Lanczos and DMRG methods. In addition, we present results for the optical conductivity obtained by the recently developed dynamical DMRG (DDMRG) method. The band insulator to Mott insulator phase transition and its characteristics are discussed.
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页码：167 / 177
页数：5
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