Sequential dip-coating of CsPbBr3 perovskite films in ambient conditions and their photovoltaic performance

被引:5
作者
Rico-Yuson, Christine Adelle [1 ,2 ]
Danwittayakul, Supamas [3 ]
Kumar, Sivanappan [4 ]
Hornyak, G. Louis [1 ]
Bora, Tanujjal [1 ]
机构
[1] Asian Inst Technol, Sch Engn & Technol, Ctr Excellence Nanotechnol, POB 4, Klongluang 12120, Pathumthani, Thailand
[2] Cent Mindanao Univ, Coll Arts & Sci, Dept Phys, Maramag 8710, Bukidnon, Philippines
[3] Natl Sci & Technol Dev Agcy, Natl Met & Mat Technol Ctr, Klongluang 12120, Pathumthani, Thailand
[4] Asian Inst Technol, Dept Energy Environm & Climate Change, Sch Environm Resources & Dev, POB 4, Klongluang 12120, Pathumthani, Thailand
关键词
SOLAR-CELLS; NANOCRYSTALS; TEMPERATURE; CSPB2BR5;
D O I
10.1007/s10853-022-07299-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a facile, versatile, and efficient deposition technique for CsPbBr3 film growth in ambient conditions satisfying nano-scale control and potential largescale production. Achieving highly crystalline halide perovskite films for solar cells remains challenging, particularly in ambient conditions. Herein, we employed a full sequential dip-coating technique for preparing CsPbBr3 perovskite films in ambient conditions and used them as the photo-absorbing layer in n-i-p type mesoscopic-structured photovoltaic devices. The sequential dipcoating approach can grow highly crystalline CsPbBr3 films. The film composition can be tuned with controlled deposition parameters to reduce unwanted derivative phases, such as CsPb2Br5 and Cs4PbBr6. The optimized CsPbBr3 films exhibit comparable photovoltaic performance to those in the same device architecture fabricated using spin-coating methods. The technique demonstrates good versatility and suitability for potential scalable and high-throughput solution processing of CsPbBr3 perovskite films. [GRAPHICS] .
引用
收藏
页码:10285 / 10298
页数:14
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