Ultra low phase noise SiGe HBT application to a C band Sapphire resonator oscillator

被引：5
|
作者：
Cibiel, G [1 ]
Régis, M [1 ]
Llopis, O [1 ]
Kersalé, Y [1 ]
Giordano, V [1 ]
Lafontaine, H [1 ]
Plana, R [1 ]
Chaubet, M [1 ]
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
来源：
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年
关键词：
D O I：
10.1109/MWSYM.2002.1011715
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the electrical and noise performance of a 0.8 mum Silicon Germanium (SiGe) transistor optimized for the design of low phase noise circuits are described. The nonlinear model developed for the transistor and its use for the design of low phase noise C band Sapphire resonator oscillator are reported. The best measured phase noise (at ambient temperature) is -133 dBc/Hz at I kHz offset from a 4.85 GHz carrier frequency for a loaded Q(L) factor of 60,000.
引用
收藏
页码：691 / 694
页数：4
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