Study of Te inclusions in CdMnTe crystals for nuclear detector applications

被引：56

作者：

Babalola, O. S. ^{[1
,2
,3
]}

Bolotnikov, A. E. ^{[2
]}

Groza, M. ^{[1
]}

Hossain, A. ^{[2
]}

Egarievwe, S. ^{[2
]}

James, R. B. ^{[2
]}

Burger, A. ^{[1
]}

机构：

[1] Fisk Univ, Dept Phys, Nashville, TN 37208 USA

[2] Brookhaven Natl Lab, Upton, NY 11973 USA

[3] Vanderbilt Univ, Nashville, TN USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 14期

基金：

美国国家科学基金会;

关键词：

Defects; Doping; Stresses; Bridgman technique; Cadmium compounds; Semiconducting II-VI materials; DEFECTS; GROWTH; CDTE; RAY;

D O I：

10.1016/j.jcrysgro.2009.04.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The concentration, size and spatial distribution of Te inclusions in the bulk of CdMnTe crystals mined from two batches of ingots were studied. An isolated planar layer decorated with Te inclusions was identified in CdMnTe crystals from the second ingot. The internal electric field of a CMT crystal was probed by infrared (IR) imaging employing Pockels electro-optic effect. The effect of an isolated plane of Te inclusions on the internal electric-field distribution within the CdMnTe crystal was studied. Space charge accumulation around the plane of Te inclusions was observed, which was found to be higher when the detector was reverse-biased. The effects of the plane of Te inclusions on the electric-field distribution within the CdMnTe crystal, and the quality of CdMnTe crystals for nuclear detector applications are discussed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3702 / 3707

页数：6

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