Two-Dimensional Semiconductors Grown by Chemical Vapor Transport

被引：105

作者：

Hu, Dake ^{[1
]}

Xu, Guanchen ^{[1
]}

Xing, Lei ^{[1
]}

Yan, Xingxu ^{[1
,2
]}

Wang, Jingyi ^{[1
]}

Zheng, Jingying ^{[1
]}

Lu, Zhixing ^{[1
]}

Wang, Peng ^{[2
]}

Pan, Xiaoqing ^{[2
,3
,4
]}

Jiao, Liying ^{[1
]}

机构：

[1] Tsinghua Univ, Key Lab Organ Optoelect & Mol Engn, Dept Chem, Beijing 100084, Peoples R China

[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[3] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

[4] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2017年 / 56卷 / 13期

基金：

中国国家自然科学基金;

关键词：

chemical vapor transport; crystal engineering; electron microscopy; molybdenum; semiconductors; MOS2 ATOMIC LAYERS; SINGLE-LAYER; TRANSITION; MONOLAYERS; MOBILITY; FILMS;

D O I：

10.1002/anie.201700439

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Developing controlled approaches for synthesizing high-quality two-dimensional (2D) semiconductors is essential for their practical applications in novel electronics. The application of chemical vapor transport (CVT), an old single-crystal growth technique, has been extended from growing 3D crystals to synthesizing 2D atomic layers by tuning the growth kinetics. Both single crystalline individual flakes and continuous films of 1 L MoS2 were successfully obtained with CVT approach at low growth temperatures of 300-6008C. The obtained 1 L MoS2 exhibits high crystallinity and comparable mobility to mechanically exfoliated samples, as confirmed by both atomic resolution microscopic imaging and electrical transport measurements. Besides MoS2, this method was also used in the growth of 2D WS2, MoSe2, MoxW1-xS2 alloys, and ReS2, thus opening up a new way for the controlled synthesis of various 2D semiconductors.

引用

页码：3611 / 3615

页数：5

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