Electron-carrier generation by edge dislocations in InN films: First-principles study

被引：23

作者：

Takei, Y. ^{[1
]}

Nakayama, T. ^{[1
]}

机构：

[1] Chiba Univ, Dept Phys, Inage Ku, Chiba 2638522, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Defects; Nitrides; Semiconducting indium compounds; MOLECULAR-BEAM EPITAXY; GROWTH; NITRIDE; ALLOYS; GAN;

D O I：

10.1016/j.jcrysgro.2009.01.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Electronic structures of edge dislocations in InN films are studied using the first-principles calculation. We found that dangling-bond states of In atoms localized in the dislocation core are located above the conduction-band bottom and thus supplies the electron carriers to the conduction band of bulk InN, in agreement with the experimental Suggestion by Wang et al. [Appl. Phys. Lett. 90 (2007) 151901]. Moreover, it is shown that the Fermi energy in the conduction band has the tendency to be pinned at the energy positions of N-related dangling-bond states. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2767 / 2771

页数：5

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