Applying analytical and numerical methods for the analysis of microcrystalline silicon solar cells

被引：6

作者：

Brammer, T. ^{[1
]}

Stiebig, H. ^{[1
]}

机构：

[1] Forschungszentrum Julich GmbH, Inst Photovolta, D-52425 Julich, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 18-19期

关键词：

microcrystalline silicon; thin-film solar cells; modeling;

D O I：

10.1016/j.solmat.2006.06.010

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The results of numerical device simulations for p-i-n diodes and the closed-form expression of the current-voltage characteristics developed for p-n diodes are compared. It is shown that the closed form expression correctly predicts the functional relationship between material parameters and device performance of p-i-n diodes. The ideality factor between 1 and 2 is analyzed in detail. The effect of the defect density, the intrinsic carrier concentration, the mobility and the built-in potential on device performance are demonstrated. These insights are applied to analyze microcrystalline silicon thin-film solar cells deposited by chemical vapor deposition at temperatures below 250 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：3021 / 3030

页数：10

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