Vertically aligned carbon nanotubes produced by radio-frequency plasma-enhanced chemical vapor deposition at low temperature and their growth mechanism

被引:29
作者
Shiratori, Y
Hiraoka, H
Yamamoto, M
机构
[1] Int Ctr Mat Res, Kawasaki Ku, Kawasaki, Kanagawa 2100855, Japan
[2] Ritsumeikan Univ, Coll Sci & Engn, Shiga 5258577, Japan
关键词
carbon nanotubes; CVD Raman spectroscopy; field emission;
D O I
10.1016/j.matchemphys.2004.03.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vertically aligned carbon nanotubes (CNTs) were produced at a low temperature (<500degreesC) by radio-frequency plasma-enhanced chemical vapor deposition. The CNTs formed by the direct current-biased C2H2/H-2 plasma process were stacked in cup-like graphite layers and contained a catalyst particle on their top. Raman spectrum showed the features of a graphene sheet-type structure formed by this plasma process. In this reaction, the direct current bias voltage was a crucial factor for efficient CNT production. Attack of carbonic cations by a moderate kinetic energy against a substrate induced the growth of vertically aligned CNTs. The growth process is discussed in terms of the dissolution/diffusion/precipitation mechanism. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:31 / 38
页数:8
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