共 42 条
Vertically aligned carbon nanotubes produced by radio-frequency plasma-enhanced chemical vapor deposition at low temperature and their growth mechanism
被引:29
作者:

Shiratori, Y
论文数: 0 引用数: 0
h-index: 0
机构: Int Ctr Mat Res, Kawasaki Ku, Kawasaki, Kanagawa 2100855, Japan

Hiraoka, H
论文数: 0 引用数: 0
h-index: 0
机构: Int Ctr Mat Res, Kawasaki Ku, Kawasaki, Kanagawa 2100855, Japan

Yamamoto, M
论文数: 0 引用数: 0
h-index: 0
机构: Int Ctr Mat Res, Kawasaki Ku, Kawasaki, Kanagawa 2100855, Japan
机构:
[1] Int Ctr Mat Res, Kawasaki Ku, Kawasaki, Kanagawa 2100855, Japan
[2] Ritsumeikan Univ, Coll Sci & Engn, Shiga 5258577, Japan
关键词:
carbon nanotubes;
CVD Raman spectroscopy;
field emission;
D O I:
10.1016/j.matchemphys.2004.03.017
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Vertically aligned carbon nanotubes (CNTs) were produced at a low temperature (<500degreesC) by radio-frequency plasma-enhanced chemical vapor deposition. The CNTs formed by the direct current-biased C2H2/H-2 plasma process were stacked in cup-like graphite layers and contained a catalyst particle on their top. Raman spectrum showed the features of a graphene sheet-type structure formed by this plasma process. In this reaction, the direct current bias voltage was a crucial factor for efficient CNT production. Attack of carbonic cations by a moderate kinetic energy against a substrate induced the growth of vertically aligned CNTs. The growth process is discussed in terms of the dissolution/diffusion/precipitation mechanism. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:31 / 38
页数:8
相关论文
共 42 条
[1]
LATTICE-DYNAMICAL MODEL FOR GRAPHITE
[J].
ALJISHI, R
;
DRESSELHAUS, G
.
PHYSICAL REVIEW B,
1982, 26 (08)
:4514-4522

ALJISHI, R
论文数: 0 引用数: 0
h-index: 0
机构: MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

DRESSELHAUS, G
论文数: 0 引用数: 0
h-index: 0
机构: MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA
[2]
A NEW MODEL EXPLAINING CARBON-FILAMENT GROWTH ON NICKEL, IRON, AND NI-CU ALLOY CATALYSTS
[J].
ALSTRUP, I
.
JOURNAL OF CATALYSIS,
1988, 109 (02)
:241-251

ALSTRUP, I
论文数: 0 引用数: 0
h-index: 0
[3]
NUCLEATION AND GROWTH OF CARBON DEPOSITS FROM NICKEL CATALYZED DECOMPOSITION OF ACETYLENE
[J].
BAKER, RTK
;
BARBER, MA
;
WAITE, RJ
;
HARRIS, PS
;
FEATES, FS
.
JOURNAL OF CATALYSIS,
1972, 26 (01)
:51-&

BAKER, RTK
论文数: 0 引用数: 0
h-index: 0

BARBER, MA
论文数: 0 引用数: 0
h-index: 0

WAITE, RJ
论文数: 0 引用数: 0
h-index: 0

HARRIS, PS
论文数: 0 引用数: 0
h-index: 0

FEATES, FS
论文数: 0 引用数: 0
h-index: 0
[4]
FORMATION OF FILAMENTOUS CARBON FROM IRON, COBALT AND CHROMIUM CATALYZED DECOMPOSITION OF ACETYLENE
[J].
BAKER, RTK
;
HARRIS, PS
;
THOMAS, RB
;
WAITE, RJ
.
JOURNAL OF CATALYSIS,
1973, 30 (01)
:86-95

BAKER, RTK
论文数: 0 引用数: 0
h-index: 0
机构:
ATOM ENERGY RES ESTAB,APPL CHEM DIV,BLDG 105,DIDCOT,BERKSHIRE,ENGLAND ATOM ENERGY RES ESTAB,APPL CHEM DIV,BLDG 105,DIDCOT,BERKSHIRE,ENGLAND

HARRIS, PS
论文数: 0 引用数: 0
h-index: 0
机构:
ATOM ENERGY RES ESTAB,APPL CHEM DIV,BLDG 105,DIDCOT,BERKSHIRE,ENGLAND ATOM ENERGY RES ESTAB,APPL CHEM DIV,BLDG 105,DIDCOT,BERKSHIRE,ENGLAND

THOMAS, RB
论文数: 0 引用数: 0
h-index: 0
机构:
ATOM ENERGY RES ESTAB,APPL CHEM DIV,BLDG 105,DIDCOT,BERKSHIRE,ENGLAND ATOM ENERGY RES ESTAB,APPL CHEM DIV,BLDG 105,DIDCOT,BERKSHIRE,ENGLAND

WAITE, RJ
论文数: 0 引用数: 0
h-index: 0
机构:
ATOM ENERGY RES ESTAB,APPL CHEM DIV,BLDG 105,DIDCOT,BERKSHIRE,ENGLAND ATOM ENERGY RES ESTAB,APPL CHEM DIV,BLDG 105,DIDCOT,BERKSHIRE,ENGLAND
[5]
MODELING STUDIES OF AMORPHOUS-CARBON
[J].
BEEMAN, D
;
SILVERMAN, J
;
LYNDS, R
;
ANDERSON, MR
.
PHYSICAL REVIEW B,
1984, 30 (02)
:870-875

BEEMAN, D
论文数: 0 引用数: 0
h-index: 0

SILVERMAN, J
论文数: 0 引用数: 0
h-index: 0

LYNDS, R
论文数: 0 引用数: 0
h-index: 0

ANDERSON, MR
论文数: 0 引用数: 0
h-index: 0
[6]
Large-area synthesis of carbon nanofibres at room temperature
[J].
Boskovic, BO
;
Stolojan, V
;
Khan, RUA
;
Haq, S
;
Silva, SRP
.
NATURE MATERIALS,
2002, 1 (03)
:165-168

Boskovic, BO
论文数: 0 引用数: 0
h-index: 0
机构: Morgan Grp Technol Ltd, Stourport On Severn DY13 8QR, Worcs, England

Stolojan, V
论文数: 0 引用数: 0
h-index: 0
机构: Morgan Grp Technol Ltd, Stourport On Severn DY13 8QR, Worcs, England

Khan, RUA
论文数: 0 引用数: 0
h-index: 0
机构: Morgan Grp Technol Ltd, Stourport On Severn DY13 8QR, Worcs, England

Haq, S
论文数: 0 引用数: 0
h-index: 0
机构: Morgan Grp Technol Ltd, Stourport On Severn DY13 8QR, Worcs, England

Silva, SRP
论文数: 0 引用数: 0
h-index: 0
机构: Morgan Grp Technol Ltd, Stourport On Severn DY13 8QR, Worcs, England
[7]
Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition
[J].
Chhowalla, M
;
Teo, KBK
;
Ducati, C
;
Rupesinghe, NL
;
Amaratunga, GAJ
;
Ferrari, AC
;
Roy, D
;
Robertson, J
;
Milne, WI
.
JOURNAL OF APPLIED PHYSICS,
2001, 90 (10)
:5308-5317

Chhowalla, M
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

Teo, KBK
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

Ducati, C
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

Rupesinghe, NL
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

论文数: 引用数:
h-index:
机构:

Ferrari, AC
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

Roy, D
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

论文数: 引用数:
h-index:
机构:

Milne, WI
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[8]
Controlling the diameter, growth rate, and density of vertically aligned carbon nanotubes synthesized by microwave plasma-enhanced chemical vapor deposition
[J].
Choi, YC
;
Shin, YM
;
Lee, YH
;
Lee, BS
;
Park, GS
;
Choi, WB
;
Lee, NS
;
Kim, JM
.
APPLIED PHYSICS LETTERS,
2000, 76 (17)
:2367-2369

Choi, YC
论文数: 0 引用数: 0
h-index: 0
机构: Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea

Shin, YM
论文数: 0 引用数: 0
h-index: 0
机构: Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea

Lee, YH
论文数: 0 引用数: 0
h-index: 0
机构:
Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea

Lee, BS
论文数: 0 引用数: 0
h-index: 0
机构: Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea

Park, GS
论文数: 0 引用数: 0
h-index: 0
机构: Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea

Choi, WB
论文数: 0 引用数: 0
h-index: 0
机构: Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea

Lee, NS
论文数: 0 引用数: 0
h-index: 0
机构: Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea

Kim, JM
论文数: 0 引用数: 0
h-index: 0
机构: Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 562756, South Korea
[9]
Role of amorphous carbon nanowires in reducing the turn-on field of carbon films prepared by microwave-heated CVD
[J].
Chuang, CC
;
Huang, JH
;
Chen, WJ
;
Lee, CC
;
Chang, Y
.
DIAMOND AND RELATED MATERIALS,
2004, 13 (4-8)
:1012-1016

Chuang, CC
论文数: 0 引用数: 0
h-index: 0
机构: Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

Huang, JH
论文数: 0 引用数: 0
h-index: 0
机构: Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

Chen, WJ
论文数: 0 引用数: 0
h-index: 0
机构: Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

Lee, CC
论文数: 0 引用数: 0
h-index: 0
机构: Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

Chang, Y
论文数: 0 引用数: 0
h-index: 0
机构: Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[10]
Field emission from carbon nanotubes grown by layer-by-layer deposition method using plasma chemical vapor deposition
[J].
Chung, SJ
;
Lim, SH
;
Jang, J
.
THIN SOLID FILMS,
2001, 383 (1-2)
:73-77

Chung, SJ
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Dept Phys, Dongdaemoon Ku, Seoul 130701, South Korea Kyung Hee Univ, Dept Phys, Dongdaemoon Ku, Seoul 130701, South Korea

Lim, SH
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Dept Phys, Dongdaemoon Ku, Seoul 130701, South Korea Kyung Hee Univ, Dept Phys, Dongdaemoon Ku, Seoul 130701, South Korea

Jang, J
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Dept Phys, Dongdaemoon Ku, Seoul 130701, South Korea Kyung Hee Univ, Dept Phys, Dongdaemoon Ku, Seoul 130701, South Korea