Many-body and strain effects on the ground-state energy for a quasi-two-dimensional quantum wells with strain

被引：0

作者：

Kim, MR ^{[1
]}

Kim, SK ^{[1
]}

Shin, DH ^{[1
]}

Son, MS ^{[1
]}

Rhee, JK ^{[1
]}

机构：

[1] Dongguk Univ, Millimeter Wave Innovat Technol Res Ctr, Seoul 100715, South Korea

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the many-body and the strain effects on the ground-state energy of semiconductor quantum wells with strain, considering the complexities related to the valence-band mixing for the hole. The exchange interaction and the screening of the Coulomb correlation depending on the strain and the sheet density are evaluated within the random-phase approximation. Such evaluation takes into account a 4 x 4 Luttinger-Kohn Hamiltonian, which leads to obtaining the valence band structure. The dependence of the ground-state energy on the strain and the sheet density are shown to become important as the dynamic correction of the Coulomb correlation is included.

引用

页码：330 / 333

页数：4

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