Insulating characteristics of polyvinyl alcohol for integrated electronics

被引:93
作者
Van Etten, Eliana A. [1 ]
Ximenes, Eder S. [2 ]
Tarasconi, Lucas T. [3 ]
Garcia, Irene T. S. [2 ,4 ]
Forte, Maria M. C. [1 ]
Boudinov, Henri [2 ,3 ]
机构
[1] Univ Fed Rio Grande do Sul, Lapol Escola Engn, BR-91501970 Porto Alegre, RS, Brazil
[2] Univ Fed Rio Grande do Sul, PGMicro, BR-91501970 Porto Alegre, RS, Brazil
[3] Univ Fed Rio Grande do Sul, Inst Fis, Lab Microelet, BR-91501970 Porto Alegre, RS, Brazil
[4] Univ Fed Rio Grande do Sul, Inst Quim, BR-91501970 Porto Alegre, RS, Brazil
关键词
Organic electronics; Gate dielectrics; Poly(vinyl alcohol); Thermogravimetry analysis; Differential scanning calorimetry; Capacitance-voltage; Dielectric spectroscopy; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; POLY(VINYL ALCOHOL); ORGANIC TRANSISTORS; GATE INSULATOR; PENTACENE; PERFORMANCE; DIELECTRICS; SUBSTRATE;
D O I
10.1016/j.tsf.2014.07.051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The aim of this work is to evaluate the effects of molecular weight, hydrolysis degree, and cross-link on the performance of Polyvinyl Alcohol (PVA) when applied as dielectric material in organic field effect transistors. For this purpose, metal-insulator-structures and polymeric films were characterized. The polymer structure was analyzed by thermogravimetry and calorimetry, and the electrical characterization of the films was performed through current-voltage and capacitance-voltage curves; and dielectric spectrometry. Cross-linkage, followed by hydrolysis degree, presented the major impact on polymer properties, due to the strong influence on chain mobility. The chain mobility increases the dielectric response and decreases the insulation capacity, generating the need to compromise between these two properties. The largest drawback encountered was the high sensitivity of the films to ambient humidity. The best performance of the organic insulator was obtained from crosslinked films made of an incompletely hydrolyzed PVA. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:111 / 116
页数:6
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