Large Efficiency Improvement in Cu2ZnSnSe4 Solar Cells by Introducing a Superficial Ge Nanolayer

被引：164

作者：

Giraldo, Sergio ^{[1
]}

Neuschitzer, Markus ^{[1
]}

Thersleff, Thomas ^{[2
]}

Lopez-Marino, Simon ^{[1
]}

Sanchez, Yudania ^{[1
]}

Xie, Haibing ^{[1
]}

Colina, Monica ^{[1
]}

Placidi, Marcel ^{[1
]}

Pistor, Paul ^{[1
]}

Izquierdo-Roca, Victor ^{[1
]}

Leifer, Klaus ^{[2
]}

Perez-Rodriguez, Alejandro ^{[1
,3
]}

Saucedo, Edgardo ^{[1
]}

机构：

[1] Catalonia Inst Energy Res IREC, Barcelona 08930, Spain

[2] Uppsala Univ, Dept Engn Sci, Angstrom Lab, S-75121 Uppsala, Sweden

[3] Univ Barcelona, IN2UB, E-08028 Barcelona, Spain

来源：

ADVANCED ENERGY MATERIALS | 2015年 / 5卷 / 21期

关键词：

THIN-FILMS; TEMPERATURE;

D O I：

10.1002/aenm.201501070

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A large improvement in Cu2ZnSnSe4 solar cell efficiency is presented based on the introduction of a Ge superficial nanolayer. This improvement is explained by three complementary effects: the formation of a liquid Ge-related phase, the possible reduction of Sn multicharge states, and the formation of GeOx nanoinclusions, which lead to an impressive solar cell (VOC) increase. © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页数：6

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