Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots

被引：15

作者：

Nevou, L. ^{[1
]}

Mangeney, J. ^{[1
]}

Tchernycheva, M. ^{[1
]}

Julien, F. H. ^{[1
]}

Guillot, F. ^{[2
]}

Monroy, E. ^{[2
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] CEA Grenoble, DRFMC SP2M PSC, Equipe Mixte CEA CNRS UJF, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期

关键词：

aluminium compounds; excited states; Fourier transform spectra; gallium compounds; ground states; high-speed optical techniques; III-V semiconductors; infrared spectra; optical saturation; semiconductor quantum dots; semiconductor superlattices; time resolved spectra; INTERSUBBAND ABSORPTION; MU-M; NONLINEAR SUSCEPTIBILITY; WELLS; TRANSITIONS; WAVELENGTH; RANGE;

D O I：

10.1063/1.3114424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the measurements of ultrafast relaxation and absorption saturation of the s-p(z) intraband transition at lambda=1.55 mu m in GaN/AlN quantum dot superlattice. The recovery time of the intraband absorption is assessed using degenerate pump-probe experiments at room temperature. Measurements reveal a multiexponential decay of the differential transmission with an ultrafast (similar to 160 fs) and a slower (similar to 1.5 ps) time constant attributed to the excited state lifetime and to the thermalization time in the ground state, respectively. The saturation intensity of the intraband absorption (< 140 MW/cm(2)) is one order of magnitude smaller than the value measured in nitride quantum wells.

引用

页数：3

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