Total 3s Emission Yield as Bulk-Sensitive Probe for a True Soft X-ray Absorption Spectrum?

被引:7
|
作者
Miedema, Piter S. [1 ]
Beye, Martin [1 ]
机构
[1] FS FLASH, DESY Photon Sci, Notkestr 85, D-22607 Hamburg, Germany
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2018年 / 9卷 / 10期
关键词
FLUORESCENCE YIELD; EDGE;
D O I
10.1021/acs.jpclett.8b00720
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The detection of the true soft X-ray absorption typically needs specially prepared submicrometer thin samples for transmission measurements. Bulk experiments instead have to rely on yield methods, for example, electron yield with limitations for insulating samples, sensitivity to applied fields, and with limited bulk sensitivity. Fluorescence yield methods instead do not have those limitations but have been found to deviate, in general, from the absorption spectrum. We demonstrate that restricting the detection to the 3s fluorescence channel (with the detector at a special angle where all polarizations contribute equally) restores the true X-ray absorption spectrum for all 3d-metal L-2,L-3 edges. These theoretically derived results are rationalized by the lack of 3s-3d interaction in the core-excited state. Comparing X-ray absorption versus 3s-PFY for arbitrary detection geometries for both linear and circular polarized light, deviations appear that can become as large as 15%.
引用
收藏
页码:2579 / 2583
页数:9
相关论文
共 12 条
  • [1] Interface-Sensitive Soft X-ray Absorption Spectroscopy by Electron/Ion-Yield Methods and Its Application to Solid-Liquid Interfaces for SrTiO3 and CoOOH
    Wang, Zi
    Toyoshima, Ryo
    Enomoto, Kota
    Mase, Kazuhiko
    Kondoh, Hiroshi
    JOURNAL OF PHYSICAL CHEMISTRY C, 2025, 129 (05): : 2570 - 2581
  • [2] A practical method for determining film thickness using X-ray absorption spectroscopy in total electron yield mode
    Isomura, Noritake
    Oh-ishi, Keiichiro
    Takahashi, Naoko
    Kosaka, Satoru
    JOURNAL OF SYNCHROTRON RADIATION, 2021, 28 : 1820 - 1824
  • [3] Lifetime-Broadening-Suppressed X-ray Absorption Spectrum of β-YbAlB4 Deduced from Yb 3d → 2p Resonant X-ray Emission Spectroscopy
    Kawamura, Naomi
    Kanai, Noriko
    Hayashi, Hisashi
    Matsuda, Yasuhiro H.
    Mizumaki, Masaichiro
    Kuga, Kentaro
    Nakatsuji, Satoru
    Watanabe, Shinji
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2017, 86 (01)
  • [4] X-ray absorption and emission spectroscopy study of Mn and Co valence and spin states in TbMn1-xCoxO3
    Cuartero, V.
    Lafuerza, S.
    Rovezzi, M.
    Garcia, J.
    Blasco, J.
    Subias, G.
    Jimenez, E.
    PHYSICAL REVIEW B, 2016, 94 (15)
  • [5] CORE-HOLE EFFECT IN THE Ce L3 X-RAY ABSORPTION SPECTRA OF CeO2 AND CeFe2: NEW EXAMINATION BY USING RESONANT X-RAY EMISSION SPECTROSCOPY
    Kotani, A.
    MODERN PHYSICS LETTERS B, 2013, 27 (16):
  • [6] Valence states of iron ions in nanostructured yttrium iron garnet Y3Fe5O12 studied by means of soft X-ray absorption spectroscopy
    Mesilov, V. V.
    Galakhov, V. R.
    Gizhevskii, B. A.
    Lobachevskaya, N. I.
    Raekers, M.
    Taubitz, C.
    Cioroianu, A. R.
    Neumann, M.
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2012, 185 (12) : 598 - 601
  • [7] Novel method for quantifying the ratios of sp3/sp2 hybridized carbon in diamond-like carbon films using soft X-ray emission spectroscopy
    Chamchuang, Thitikorn
    Suzuki, Tsuneo
    Tunmee, Sarayut
    Silawong, Praphaphon
    Komatsu, Keiji
    Saitoh, Hidetoshi
    DIAMOND AND RELATED MATERIALS, 2024, 150
  • [8] Investigation of the vanadium L23-edge x-ray absorption spectrum of SrVO3 using configuration interaction calculations: Multiplet, valence, and crystal-field effects
    Wu, M.
    Zheng, J-C
    Wang, H-Q
    PHYSICAL REVIEW B, 2018, 95 (24)
  • [9] Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography
    Sdoeung, Sayleap
    Sasaki, Kohei
    Kuramata, Akito
    Kasu, Makoto
    APPLIED PHYSICS EXPRESS, 2022, 15 (11)
  • [10] Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography
    Sdoeung, Sayleap
    Otsubo, Yuto
    Sasaki, Kohei
    Kuramata, Akito
    Kasu, Makoto
    APPLIED PHYSICS LETTERS, 2023, 123 (12)