Selective-Area Metal Organic Vapor-Phase Epitaxy of InGaAs/InP Heterostrucures On Si For Advanced CMOS Devices

被引：5

作者：

Merckling, C. ^{[1
]}

Waldron, N. ^{[1
]}

Jiang, S. ^{[1
,2
]}

Guo, W. ^{[1
]}

Ryan, P. ^{[3
]}

Collaert, N. ^{[1
]}

Caymax, M. ^{[1
]}

Barla, K. ^{[1
]}

Heyns, M. ^{[1
,2
]}

Thean, A. ^{[1
]}

Vandervorst, W. ^{[1
,2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, B-3001 Louvain, Belgium

[3] Jordan Valley Semicond UK Ltd, Belmont DH1 1TW, Durham, England

来源：

DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 2014年 / 61卷 / 02期

关键词：

III-VS; INP; SILICON; GROWTH; INTEGRATION;

D O I：

10.1149/06102.0107ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This study relates to the heteroepitaxy of InP buffer and InxGa1-xAs channel layers on patterned Si substrates using the defect trapping technique. We focused on the optimization and control of the InP buffer layer in STI trenches to obtain low defect density and high mobility InxGa1-xAs channel layer. The demonstration of III-V heteroepitaxy at scaled dimensions opens the possibility for new applications integrated on Silicon.

引用

收藏

页码：107 / 112

页数：6

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