Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element

被引：68

作者：

Yang, Yuchao ^{[1
]}

Lee, Jihang ^{[1
]}

Lee, Seunghyun ^{[1
]}

Liu, Che-Hung ^{[1
]}

Zhong, Zhaohui ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 22期

基金：

美国国家科学基金会;

关键词：

NONVOLATILE MEMORY; SWITCHING MEMORIES; AMORPHOUS-CARBON; DEVICE; MEMRISTOR; DENSITY; OZONE;

D O I：

10.1002/adma.201400270

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A resistive memory with graphene electrodes is demonstrated. The spontaneous functionalization of graphene during device fabrication results in insulator-metal transition-like volatile threshold switching, creating a 1 selector - 1 resistor (1S1R) structure with a built-in selector and leading to a desirable highly nonlinear on-state behavior of the oxide resistive memory.

引用

页码：3693 / 3699

页数：7

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