Flexible IZO Homojunction TFTs With Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

被引：32

作者：

Nie, Sha ^{[1
,2
]}

Yang, Yi ^{[1
,2
]}

He, Yongli ^{[1
,2
]}

Shi, Yi ^{[1
,2
]}

Wan, Qing ^{[1
,2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Hangzhou Dianzi Univ, Sch Electron & Informat, Hangzhou 310018, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 03期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

Thin-film transistor; composite electrolyte; electric-double-layer; flexible electronics; THIN-FILM TRANSISTORS; DOUBLE-LAYER TRANSISTORS; OXIDE SEMICONDUCTORS; CHITOSAN MEMBRANES;

D O I：

10.1109/LED.2018.2798638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solution-processed graphene oxide/chitosan composite electrolyte film showed a large specific gate electric-double-layer capacitance of similar to 3.16 mu F/cm(2) at 1 Hz. Indium-zinc-oxide (IZO) homojunction thin-film transistors (TFTs) on paper substrates using such composite electrolytes as gate dielectrics showed a good electrical performance and a high stability. Flexible IZO-based homojunction TFTs showed a high drain current ON/OFF ratio of similar to 1.8 x 10(7), a large field-effect mobility of > 30 cm(2)V(-1)s(-1), and a low subthreshold swing of 90 mV/decade. At last, a resistor-loaded inverter with a maximal conversion factor of 6.7, and a dual in-planegate NAND logic operationwere also demonstrated on such flexible IZO-based TFTs. Such oxide-based homojunction TFTs on paper substrates have potential applications in next-generation low-cost and portable new-concept electronics.

引用

页码：363 / 366

页数：4

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