Flexible IZO Homojunction TFTs With Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

被引：32

作者：

Nie, Sha ^{[1
,2
]}

Yang, Yi ^{[1
,2
]}

He, Yongli ^{[1
,2
]}

Shi, Yi ^{[1
,2
]}

Wan, Qing ^{[1
,2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Hangzhou Dianzi Univ, Sch Electron & Informat, Hangzhou 310018, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 03期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

Thin-film transistor; composite electrolyte; electric-double-layer; flexible electronics; THIN-FILM TRANSISTORS; DOUBLE-LAYER TRANSISTORS; OXIDE SEMICONDUCTORS; CHITOSAN MEMBRANES;

D O I：

10.1109/LED.2018.2798638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solution-processed graphene oxide/chitosan composite electrolyte film showed a large specific gate electric-double-layer capacitance of similar to 3.16 mu F/cm(2) at 1 Hz. Indium-zinc-oxide (IZO) homojunction thin-film transistors (TFTs) on paper substrates using such composite electrolytes as gate dielectrics showed a good electrical performance and a high stability. Flexible IZO-based homojunction TFTs showed a high drain current ON/OFF ratio of similar to 1.8 x 10(7), a large field-effect mobility of > 30 cm(2)V(-1)s(-1), and a low subthreshold swing of 90 mV/decade. At last, a resistor-loaded inverter with a maximal conversion factor of 6.7, and a dual in-planegate NAND logic operationwere also demonstrated on such flexible IZO-based TFTs. Such oxide-based homojunction TFTs on paper substrates have potential applications in next-generation low-cost and portable new-concept electronics.

引用

页码：363 / 366

页数：4

共 25 条

[1] Oxide Electric-Double-Layer Transistors Gated by a Chitosan-Based Biopolymer Electrolyte [J].

Chao, Jin Yu ;

Zhu, Li Qiang ;

Xiao, Hui ;

Yuan, Zhi Guo .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (08) :799-801

[2] Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates [J].

Dou, Wei ;

Zhu, Liqiang ;

Jiang, Jie ;

Wan, Qing .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) :259-261

[3] Electric double-layer transistors: a review of recent progress [J].

Du, Haiwei ;

Lin, Xi ;

Xu, Zhemi ;

Chu, Dewei .

JOURNAL OF MATERIALS SCIENCE, 2015, 50 (17) :5641-5673

[4] Chemically Derived Graphene Oxide: Towards Large-Area Thin-Film Electronics and Optoelectronics [J].

Eda, Goki ;

Chhowalla, Manish .

ADVANCED MATERIALS, 2010, 22 (22) :2392-2415

[5] Insulator to Semimetal Transition in Graphene Oxide [J].

Eda, Goki ;

Mattevi, Cecilia ;

Yamaguchi, Hisato ;

Kim, HoKwon ;

Chhowalla, Manish .

JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (35) :15768-15771

[6] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].

Fortunato, E. ;

Barquinha, P. ;

Martins, R. .

ADVANCED MATERIALS, 2012, 24 (22) :2945-2986

[7] Electric-double-layer field-effect transistors with ionic liquids [J].

Fujimoto, Takuya ;

Awaga, Kunio .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2013, 15 (23) :8983-9006

[8]

Gao W, 2009, NAT CHEM, V1, P403, DOI [10.1038/NCHEM.281, 10.1038/nchem.281]

[9] Ultra-Robust Graphene Oxide-Silk Fibroin Nanocomposite Membranes [J].

Hu, Kesong ;

Gupta, Maneesh K. ;

Kulkarni, Dhaval D. ;

Tsukruk, Vladimir V. .

ADVANCED MATERIALS, 2013, 25 (16) :2301-2307

[10] Electrolyte-Gated Transistors for Organic and Printed Electronics [J].

Kim, Se Hyun ;

Hong, Kihyon ;

Xie, Wei ;

Lee, Keun Hyung ;

Zhang, Sipei ;

Lodge, Timothy P. ;

Frisbie, C. Daniel .

ADVANCED MATERIALS, 2013, 25 (13) :1822-1846

← 1 2 3 →