Readying Directed Self-Assembly for Patterning in Semi-Conductor Manufacturing

被引:15
作者
Gronheid, Roel [1 ]
Delgadillo, Paulina Rincon [1 ,2 ,3 ]
Singh, Arjun [1 ,2 ]
Younkin, Todd R. [4 ]
Sayan, Safak [4 ]
Chan, Boon Teik [1 ]
Van Look, Lieve [1 ]
Bekaert, Joost [1 ]
Pollentier, Ivan [1 ]
Nealey, Paul F. [3 ]
机构
[1] IMEC VZW, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Louvain, Belgium
[3] Univ Chicago, Inst Mol Engn, Chicago, IL 60637 USA
[4] IMEC, Heverlee, Belgium
关键词
directed self-assembly; grapho-epitaxy; chemo-epitaxy; lamellar phase block copolymers; cylindrical phase block copolymers; metrology; BLOCK-COPOLYMERS; MULTIPLICATION; LITHOGRAPHY;
D O I
10.2494/photopolymer.26.779
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
In recent years Directed Self-Assembly (DSA) has come up as a strong candidate technology for advanced lithography. DSA is a complementary technology that is used to enhance established projection lithography. In this paper, an overview is given of activities at imec that are driving towards readying DSA technology for implementation into semiconductor manufacturing. Flows for line/space and contact hole pattern formation based on chemo- as well as grapho-epitaxy are available and used for understanding process sensitivities, evaluation of defect densities and the demonstration of integration approaches. The state-of-the-art of the various process flows is discussed along with the primary outstanding issues.
引用
收藏
页码:779 / 791
页数:13
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