Readying Directed Self-Assembly for Patterning in Semi-Conductor Manufacturing

被引：14

作者：

Gronheid, Roel ^{[1
]}

Delgadillo, Paulina Rincon ^{[1
,2
,3
]}

Singh, Arjun ^{[1
,2
]}

Younkin, Todd R. ^{[4
]}

Sayan, Safak ^{[4
]}

Chan, Boon Teik ^{[1
]}

Van Look, Lieve ^{[1
]}

Bekaert, Joost ^{[1
]}

Pollentier, Ivan ^{[1
]}

Nealey, Paul F. ^{[3
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Louvain, Belgium

[3] Univ Chicago, Inst Mol Engn, Chicago, IL 60637 USA

[4] IMEC, Heverlee, Belgium

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2013年 / 26卷 / 06期

关键词：

directed self-assembly; grapho-epitaxy; chemo-epitaxy; lamellar phase block copolymers; cylindrical phase block copolymers; metrology; BLOCK-COPOLYMERS; MULTIPLICATION; LITHOGRAPHY;

D O I：

10.2494/photopolymer.26.779

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

In recent years Directed Self-Assembly (DSA) has come up as a strong candidate technology for advanced lithography. DSA is a complementary technology that is used to enhance established projection lithography. In this paper, an overview is given of activities at imec that are driving towards readying DSA technology for implementation into semiconductor manufacturing. Flows for line/space and contact hole pattern formation based on chemo- as well as grapho-epitaxy are available and used for understanding process sensitivities, evaluation of defect densities and the demonstration of integration approaches. The state-of-the-art of the various process flows is discussed along with the primary outstanding issues.

引用

页码：779 / 791

页数：13

共 37 条

[1] Polarity-Switching Top Coats Enable Orientation of Sub-10-nm Block Copolymer Domains
Bates, Christopher M.
Seshimo, Takehiro
Maher, Michael J.
Durand, William J.
Cushen, Julia D.
Dean, Leon M.
Blachut, Gregory
Ellison, Christopher J.
Willson, C. Grant
[J]. SCIENCE, 2012, 338 (6108) : 775 - 779
[2] BLOCK COPOLYMER THERMODYNAMICS - THEORY AND EXPERIMENT
BATES, FS
FREDRICKSON, GH
[J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1990, 41 (01) : 525 - 557
[3] Borodovsky Y., 2012, SEM W 2012 JUN 11 SA
[4] Cao Y., 2013, P SOC PHOTO-OPT INS, V8680, P8680
[5] Chang S.-W., 2013, P SOC PHOTO-OPT INS, V8680, P8680
[6] Dense self-assembly on sparse chemical patterns: Rectifying and multiplying lithographic patterns using block copolymers
Cheng, Joy Y.
Rettner, Charles T.
Sanders, Daniel P.
Kim, Ho-Cheol
Hinsberg, William D.
[J]. ADVANCED MATERIALS, 2008, 20 (16) : 3155 - 3158
[7] Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist
Cheng, Joy Y.
Sanders, Daniel P.
Truong, Hoa D.
Harrer, Stefan
Friz, Alexander
Holmes, Steven
Colburn, Matthew
Hinsberg, William D.
[J]. ACS NANO, 2010, 4 (08) : 4815 - 4823
[8] Fabrication of nanostructures with long-range order using block copolymer lithography
Cheng, JY
Ross, CA
Thomas, EL
Smith, HI
Vancso, GJ
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3657 - 3659
[9] Craig G. S. W., 2010, P SOC PHOTO-OPT INS, V7637, P7637
[10] Geometric Control of Chemically Nano-patterned Substrates for Feature Multiplication Using Directed Self-Assembly of Block Copolymers
Delgadillo, Paulina A. Rincon
Gronheid, Roel
Thode, Christopher J.
Wu, Hengpeng
Cao, Yi
Lin, Guanyang
Somervell, Mark
Nafus, Kathleen
Nealey, Paul F.
[J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2012, 25 (01) : 77 - 81

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