Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire

被引：13

作者：

Chou, Ta-Shun ^{[1
]}

Bin Anooz, Saud ^{[1
]}

Grueneberg, Raimund ^{[1
]}

Dropka, Natasha ^{[1
]}

Miller, Wolfram ^{[1
]}

Tran, Thi Thuy Vi ^{[1
]}

Rehm, Jana ^{[1
]}

Albrecht, Martin ^{[1
]}

Popp, Andreas ^{[1
]}

机构：

[1] Leibniz Inst Kristallzuchtung IKZ, Max Born Str 2, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2022年 / 592卷

关键词：

Computer simulation; Metalorganic vapor phase epitaxy; Gallium compounds; Oxides; NEURAL-NETWORKS; GAS-PHASE; OPTIMIZATION; LAYERS; TRIETHYLGALLIUM; DECOMPOSITION; SURFACE; MODEL;

D O I：

10.1016/j.jcrysgro.2022.126737

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work, we demonstrate a machine learning approach, Random Forest, for the beta-Ga2O3 growth rate prediction in the metal-organic vapor phase epitaxy (MOVPE) by analyzing the growth process of beta-Ga2O3 on sapphire optically. The proposed model can assess the complex non-linear dependencies among the growth parameters and optimize them for the optimal growth rate. The model based on the process parameters (e.g., precursor concentration, chamber pressure, and push gas) provides high predictive power, reaching the coefficient of determination (R-2) of 0.95 and 0.92 for the training and testing sets. The outcome of the model is applicable to both homoepitaxial and heteroepitaxial processes and on different substrate orientations.

引用

页数：9

共 45 条

[21] Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification [J].

Liu, Xin ;

Dang, Yifan ;

Tanaka, Hiroyuki ;

Fukuda, Yusuke ;

Kutsukake, Kentaro ;

Kojima, Takuto ;

Ujihara, Toru ;

Usami, Noritaka .

ACS OMEGA, 2022, 7 (08) :6665-6673

[22]

Mayumi Oshiro Thais, 2012, Machine Learning and Data Mining in Pattern Recognition. Proceedings 8th International Conference, MLDM 2012, P154, DOI 10.1007/978-3-642-31537-4_13

[23] Towards smooth (010) β-Ga2O3films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio [J].

Mazzolini, P. ;

Bierwagen, O. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (35)

[24] Kinetic Monte Carlo model for homoepitaxial growth of Ga2O3 [J].

Miller, Wolfram ;

Meiling, Dennis ;

Schewski, Robert ;

Popp, Andreas ;

Bin Anooz, Saud ;

Albrecht, Martin .

PHYSICAL REVIEW RESEARCH, 2020, 2 (03)

[25] Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy [J].

Murakami, Hisashi ;

Nomura, Kazushiro ;

Goto, Ken ;

Sasaki, Kohei ;

Kawara, Katsuaki ;

Quang Tu Thieu ;

Togashi, Rie ;

Kumagai, Yoshinao ;

Higashiwaki, Masataka ;

Kuramata, Akito ;

Yamakoshi, Shigenobu ;

Monemar, Bo ;

Koukitu, Akinori .

Applied Physics Express, 2015, 8 (01)

[26] SURFACE STUDIES OF THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100) [J].

MURRELL, AJ ;

WEE, ATS ;

FAIRBROTHER, DH ;

SINGH, NK ;

FOORD, JS ;

DAVIES, GJ ;

ANDREWS, DA .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :199-202

[27] Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy [J].

Nomura, Kazushiro ;

Goto, Ken ;

Togashi, Rie ;

Murakami, Hisashi ;

Kumagai, Yoshinao ;

Kuramata, Akito ;

Yamakoshi, Shigenobu ;

Koukitu, Akinori .

JOURNAL OF CRYSTAL GROWTH, 2014, 405 :19-22

[28] PYROLYSIS OF TRIETHYLGALLIUM BY THE TOLUENE CARRIER TECHNIQUE [J].

PAPUTA, MC ;

PRICE, SJW .

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1979, 57 (24) :3178-3181

[29] Brillouin zone and band structure of β-Ga2O3 [J].

Peelaers, Hartwin ;

Van de Walle, Chris G. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (04) :828-832

[30] CROSS-VALIDATION OF REGRESSION-MODELS [J].

PICARD, RR ;

COOK, RD .

JOURNAL OF THE AMERICAN STATISTICAL ASSOCIATION, 1984, 79 (387) :575-583

← 1 2 3 4 5 →