Edge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication layers for 10-Gb/s applications

被引：18

作者：

Burm, J ^{[1
]}

Choi, JY

Cho, SR

Kim, MD

Yang, SK

Back, JM

Rhee, DY

Jeon, BO

Kang, HY

Jang, DH

机构：

[1] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea

[2] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[3] Chungnam Natl Univ, Dept Phys, Taejon, South Korea

[4] Samsung Elect, Telecommun R&D Ctr, Photon Solut Lab, Suwon 442742, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 07期

基金：

欧洲研究理事会;

关键词：

avalanche photodiodes (APDs); optical communication; semiconductor device breakdown;

D O I：

10.1109/LPT.2004.829546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Edge-breakdown free InP-InGaAs avalanche photodiodes (APDs) for 10-Gb/s operation were fabricated. Two-dimensional current profiles were measured to investigate the edge breakdown on double-stepped planar APDs. The edge breakdown prominent at high gain increased with the absorption layer thickness for a fixed multiplication thickness (0.25 mum). The edge breakdown was suppressed for 0.4-mum absorption layer at the gain of ten. A simple physical model was proposed to predict the results successfully. To suppress the edge breakdown, the multiplication layer thickness should be selected so that the breakdown voltage is minimum at the selected thickness.

引用

页码：1721 / 1723

页数：3

共 10 条

[1] HIGH-SPEED INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY [J].

CAMPBELL, JC ;

TSANG, WT ;

QUA, GJ ;

JOHNSON, BC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (03) :496-500

[2] Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode [J].

Cho, SR ;

Yang, SK ;

Ma, JA ;

Lee, SD ;

Yu, JS ;

Choo, AG ;

Kim, TI ;

Burm, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (05) :534-536

[3] Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes [J].

Haralson, JN ;

Parks, JW ;

Brennan, KF ;

Clark, W ;

Tarof, LE .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (11) :2137-2140

[4]

Itzler MA, 1998, 24TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION, VOL 1-3, P59, DOI 10.1109/ECOC.1998.732435

[5]

Kim HS, 2001, J KOREAN PHYS SOC, V39, P28

[6] A PLANAR INP/INGAAS AVALANCHE PHOTODIODE WITH FLOATING GUARD RING AND DOUBLE DIFFUSED JUNCTION [J].

LIU, Y ;

FORREST, SR ;

HLADKY, J ;

LANGE, MJ ;

ACKLEY, DE .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1992, 10 (02) :182-193

[7] A new look at impact ionization - Part I: A theory of gain, noise, breakdown probability, and frequency response [J].

McIntyre, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) :1623-1631

[8]

SMETONA S, 2002, 14 IND PHOSPH REL MA, P373

[9] A new look at impact ionization - Part II: Gain and noise in short avalanche photodiodes [J].

Yuan, P ;

Anselm, KA ;

Hu, C ;

Nie, H ;

Lenox, C ;

Holmes, AL ;

Streetman, BC ;

Campbell, JC ;

McIntyre, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) :1632-1639

[10] Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses [J].

Yuan, P ;

Hansing, CC ;

Anselm, KA ;

Lenox, CV ;

Nie, H ;

Holmes, AL ;

Streetman, BC ;

Campbell, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (02) :198-204

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