Spin injection from perpendicular magnetized ferromagnetic δ-MnGa into (Al,Ga)As heterostructures

被引：45
作者：
Adelmann, C.
Hilton, J. L.
Schultz, B. D.
McKernan, S.
Palmstrom, C. J.
Lou, X.
Chiang, H. -S.
Crowell, P. A.
机构：
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期
关键词：
D O I：
10.1063/1.2349833
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical spin injection from ferromagnetic delta-MnGa into an (Al,Ga)As p-i-n light-emitting diode (LED) is demonstrated. The delta-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence, without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field. (c) 2006 American Institute of Physics.
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相关论文
共 22 条
[1]   Spin injection and relaxation in ferromagnet-semiconductor heterostructures [J].
Adelmann, C ;
Lou, X ;
Strand, J ;
Palmstrom, CJ ;
Crowell, PA .
PHYSICAL REVIEW B, 2005, 71 (12)
[2]   Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures -: art. no. 102107 [J].
Dong, XY ;
Adelmann, C ;
Xie, JQ ;
Palmstrom, CJ ;
Lou, X ;
Strand, J ;
Crowell, PA ;
Barnes, JP ;
Petford-Long, AK .
APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3
[3]  
Dyakonov M. I., 1984, Optical Orientation, P11
[4]   Electron spin injection into GaAs from ferromagnetic contacts in remanence -: art. no. 032502 [J].
Gerhardt, NC ;
Hövel, S ;
Brenner, C ;
Hofmann, MR ;
Lo, FY ;
Reuter, D ;
Wieck, AD ;
Schuster, E ;
Keune, W ;
Westerholt, K .
APPLIED PHYSICS LETTERS, 2005, 87 (03)
[5]   Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier [J].
Hanbicki, AT ;
van 't Erve, OMJ ;
Magno, R ;
Kioseoglou, G ;
Li, CH ;
Jonker, BT ;
Itskos, G ;
Mallory, R ;
Yasar, M ;
Petrou, A .
APPLIED PHYSICS LETTERS, 2003, 82 (23) :4092-4094
[6]   Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor [J].
Hanbicki, AT ;
Jonker, BT ;
Itskos, G ;
Kioseoglou, G ;
Petrou, A .
APPLIED PHYSICS LETTERS, 2002, 80 (07) :1240-1242
[7]  
HILTON JG, UNPUB
[8]   Phase behavior of thin film Mn/GaAs interfacial reactions [J].
Hilton, JL ;
Schultz, BD ;
McKernan, S ;
Spanton, SM ;
Evans, MMR ;
Palmstrom, CJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04) :1752-1758
[9]   Interfacial reactions of Mn/GaAs thin films [J].
Hilton, JL ;
Schultz, BD ;
McKernan, S ;
Palmstrom, CJ .
APPLIED PHYSICS LETTERS, 2004, 84 (16) :3145-3147
[10]   Electrically injected spin-polarized vertical-cavity surface-emitting lasers [J].
Holub, M ;
Shin, J ;
Chakrabarti, S ;
Bhattacharya, P .
APPLIED PHYSICS LETTERS, 2005, 87 (09)
123