Spin injection from perpendicular magnetized ferromagnetic δ-MnGa into (Al,Ga)As heterostructures

被引：45
作者：
Adelmann, C.
Hilton, J. L.
Schultz, B. D.
McKernan, S.
Palmstrom, C. J.
Lou, X.
Chiang, H. -S.
Crowell, P. A.
机构：
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期
关键词：
D O I：
10.1063/1.2349833
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical spin injection from ferromagnetic delta-MnGa into an (Al,Ga)As p-i-n light-emitting diode (LED) is demonstrated. The delta-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence, without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field. (c) 2006 American Institute of Physics.
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