Oxidation behavior of Si3N4 fibers derived from polycarbosilane

被引：24

作者：

Li, Siwei ^{[1
,2
]}

Li, Yongcai ^{[1
]}

Xiao, Hongrui ^{[1
]}

Li, Xiangdong ^{[1
]}

Wang, Qi ^{[1
]}

Tang, Ming ^{[1
]}

Tu, Huibin ^{[1
]}

Huang, Jinqiu ^{[1
]}

Chen, Lifu ^{[1
]}

Yu, Zhiyang ^{[3
]}

机构：

[1] Xiamen Univ, Fujian Key Lab Adv Mat, Coll Mat, Xiamen, Peoples R China

[2] Xiamen Univ, Minist Educ, Key Lab High Performance Ceram Fibers, Xiamen 361005, Peoples R China

[3] Xiamen Univ Technol, Sch Mat Sci & Engn, Xiamen, Peoples R China

来源：

CORROSION SCIENCE | 2018年 / 136卷

基金：

中国国家自然科学基金;

关键词：

Silicon nitride fibers; Oxidation kinetics; Microstructure; Polymer derived ceramics; SILICON-NITRIDE FIBERS; CERAMIC-MATRIX COMPOSITES; HIGH-TENSILE STRENGTH; C-N CERAMICS; THERMAL-STABILITY; CARBON-MONOXIDE; CARBIDE FIBER; HI-NICALON; O SYSTEM; KINETICS;

D O I：

10.1016/j.corsci.2018.02.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si3N4 fibers prepared from polycarbosliane are exposed in dry and wet air respectively from 800 to 1300 degrees C for up to 1 h. After dry air oxidation, an uniform SiO2 coating doped with nitrogen is formed on fiber surface. However, the coating obtained in wet air is much thicker with more complex microstructure containing sub layers of N-doped SiO2, near stoichiometric Si3N4 and graphite-like nanoribbons. Activation energy for oxidation in wet and dry air is determined as 108 and 152 kJ mol(-1), respectively. Both of the values are lower than the known Si3N4 materials with E-a of 259-485 kJ mol(-1).

引用

页码：9 / 17

页数：9

共 59 条

[11] OXIDATION-KINETICS OF HOT-PRESSED AND SINTERED ALPHA-SIC [J].

COSTELLO, JA ;

TRESSLER, RE .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (06) :327-331

[12] OXIDATION-KINETICS OF SILICON-CARBIDE CRYSTALS AND CERAMICS .1. IN DRY OXYGEN [J].

COSTELLO, JA ;

TRESSLER, RE .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1986, 69 (09) :674-681

[13]

Deal B. E., 1963, J ELECTROCHEM SOC, V110, P116

[14] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[15] THERMODYNAMICS OF THE SI-N-O SYSTEM AND KINETIC MODELING OF OXIDATION OF SI3N4 [J].

DU, HH ;

TRESSLER, RE ;

SPEAR, KE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (11) :3210-3215

[16] OXIDATION STUDIES OF CRYSTALLINE CVD SILICON-NITRIDE [J].

DU, HH ;

TRESSLER, RE ;

SPEAR, KE ;

PANTANO, CG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (05) :1527-1536

[17]

Fox DS, 1998, J AM CERAM SOC, V81, P945, DOI 10.1111/j.1151-2916.1998.tb02431.x

[18] Atomic structure of amorphous silicon nitride fibers [J].

Gilkes, KWR .

AICHE JOURNAL, 1997, 43 (11) :2870-2873

[19] TOPOLOGY AND GEOMETRY IN THE IRRADIATION-INDUCED AMORPHIZATION OF INSULATORS [J].

HOBBS, LW .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 91 (1-4) :30-42

[20] OXIDATION KINETICS OF POWDERED SILICON NITRIDE [J].

HORTON, RM .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1969, 52 (03) :121-+

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