Highly ordered mesoporous CdxZn1-xSe ternary compound semiconductors with controlled band gap energies

Highly ordered mesoporous compound semiconductors (CdxZn1-xSe) with crystalline frameworks were successfully synthesized via a nano-replication method from a mesoporous silica template (bicontinuous 3D cubic la3d mesostructure, KIT-6). Simple impregnation with various molar compositions of the precursors within mesopores of the silica template, reduction at 500 degrees C under hydrogen atmospheres and subsequent removal of the silica template using NaOH solution resulted in the mesoporous CdxZn1-xSe ternary compound semiconductor. The mesoporous CdxZn1-xSe materials with high surface areas (90-120 m(2) g(-1)) were investigated by X-ray diffraction, N-2 adsorption-desorption, electron microscopy, and UV-visible spectroscopy. The unique optical properties and band gap profiles of the template-free CdxZn1-xSe materials were controlled chemically by different Cd/Zn molar compositions, and also physically by the framework thickness. Diffuse reflectance UV-visible studies indicate that the band gap energies (E-g) of the mesoporous CdxZn1-xSe materials widened as the amount of Cd decreased. Decreasing the framework thickness also results in the band gap widening of the mesoporous Cd0.5Zn0.5Se materials due to the nano-size effect.