Advances in synthesis, properties and emerging applications of tin sulfides and its heterostructures

被引:55
作者
Shinde, Pratik [1 ]
Rout, Chandra Sekhar [1 ]
机构
[1] Jain Univ, Ctr Nano & Mat Sci, Jain Global Campus, Bangalore 562112, Karnataka, India
关键词
SNS THIN-FILMS; ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; TRANSITION-METAL DICHALCOGENIDES; ELECTRON-TRANSPORT LAYER; RF-SPUTTERED SNS; HIGH-PERFORMANCE; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS;
D O I
10.1039/d0qm00470g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The tin sulfide (SnxSy) class of materials has attracted tremendous research interest in recent years owing to their intriguing physicochemical properties. Their inimitable optical, electronic, and mechanical properties open up windows for a broad range of promising applications. The precise design and tuning of the crystal phase, size, thickness, and composition holds excellent potential for utilizing them as crucial components of advanced devices. In this review, we explore the recent progress in their synthesis, properties, and applications. Initially, we outline the SnxSy class of materials briefly and discuss the recent developments in their phase and crystal dependent physicochemical properties. Numerous strategies have been portrayed for the preparation of single- to multi-layer, zero dimension to three dimension, and nano-sized to micro-sized materials. In-depth information on synthesis methods has been explored under the top-down and bottom-up approaches. The review includes the properties and synthesis of tin sulfides and also delivers exciting progress in various fields of applications. Finally, the prospects and opportunities in these exciting fields are discussed, based on their current progress.
引用
收藏
页码:516 / 556
页数:41
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