A cellular-band CDMA 0.25-μm CMOS LNA linearized using active post-distortion

被引：69

作者：

Kim, N ^{[1
]}

Aparin, V ^{[1
]}

Barnett, K ^{[1
]}

Persico, C ^{[1
]}

机构：

[1] Qualcomm, San Diego, CA 92122 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2006年 / 41卷 / 07期

关键词：

IM3; cancellation; linearity; low-noise amplifier (LNA); RF CMOS;

D O I：

10.1109/JSSC.2006.873909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The theory of a linearization method using active post-distortion (APD) is explained for low-frequency and high-frequency applications. The low-frequency cancellation is explained in power series format and the high-frequency cancellation is explained in Volterra series format. The method is utilized for a cellular band (869-894 MHz) CDMA low-noise amplifier (LNA), which is implemented in 0.25-mu m CMOS process. The LNA achieves 1.2 dB NF, 16.2 dB power gain, and +8 dBm IIP3 while consuming 12 mA current from 2.6 V supply voltage. It shows 13.5 dB of IM3 product reduction with 0.15 dB NF penalty in comparison with an LNA which does not use the APD method.

引用

页码：1530 / 1534

页数：5