High-Q AlN ladder-structure photonic crystal nanocavity fabricated by layer transfer

被引：6

作者：

Sergent, Sylvain ^{[1
]}

Arita, Munetaka ^{[1
]}

Kako, Satoshi ^{[2
]}

Tanabe, Katsuaki ^{[1
]}

Iwamoto, Satoshi ^{[1
,2
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期

基金：

日本学术振兴会;

关键词：

photonic crystal; 3D-FDTD; adhesive bonding; GaN quantum dot;

D O I：

10.1002/pssc.201300217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this report, we show how one-dimensional ladder-structure photonic crystal cavity design can be used to reduce extrinsic losses in AlN photonic crystal nanocavities. The design is implemented in an AlN epilayer containing GaN QDs by a layer transfer method. Micro-photoluminescence characterization of nanocavities reveals resolution-limited quality factors as high 6900, the highest reported to date in group-III nitride photonic crystal nanocavities. Three-dimensional finite-difference time-domain simulation of the fundamental, 1st-order and 2nd-order modes of a ladder-structure nanobeam photonic crystal cavity. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1517 / 1520

页数：4

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