Self-consistent tight-binding calculations of electronic and optical properties of semiconductor nanostructures

被引：39

作者：

DiCarlo, A ^{[1
]}

Pescetelli, S ^{[1
]}

Paciotti, M ^{[1
]}

Lugli, P ^{[1
]}

Graf, M ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 98卷 / 09期

关键词：

semiconductors; nanostructures; electronic band structure; optical properties;

D O I：

10.1016/0038-1098(96)00136-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical properties and electronic states of semiconductor nanostructures are calculated by using tight-binding models which account for valence band mixing, strain and external applied potentials in a self-consistent fashion. An appropriate formulation of the optical susceptibility in the tight-binding basis is given without introducing-any additional parameters. Results for strained and unstrained systems are given. Copyright (C) 1996 Published by Elsevier Science Ltd.

引用

页码：803 / 806

页数：4

共 17 条

[11] STRUCTURAL AND ELECTRONIC-PROPERTIES OF GAP-ALP (001) SUPERLATTICES [J].

PARK, CH ;

CHANG, KJ .

PHYSICAL REVIEW B, 1993, 47 (19) :12709-12715

[12] BAND-EDGE DEFORMATION POTENTIALS IN A TIGHT-BINDING FRAMEWORK [J].

PRIESTER, C ;

ALLAN, G ;

LANNOO, M .

PHYSICAL REVIEW B, 1988, 37 (14) :8519-8522

[13] BAND MIXING IN SEMICONDUCTOR SUPERLATTICES [J].

SCHULMAN, JN ;

CHANG, YC .

PHYSICAL REVIEW B, 1985, 31 (04) :2056-2068

[14] SIMPLIFIED LCAO METHOD FOR THE PERIODIC POTENTIAL PROBLEM [J].

SLATER, JC ;

KOSTER, GF .

PHYSICAL REVIEW, 1954, 94 (06) :1498-1524

[15] A SEMI-EMPIRICAL TIGHT-BINDING THEORY OF THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS [J].

VOGL, P ;

HJALMARSON, HP ;

DOW, JD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (05) :365-378

[16] STABILITY AND ELECTRONIC-STRUCTURE OF ULTRATHIN [001] (GAAS)M(ALAS)M SUPERLATTICES [J].

WOOD, DM ;

WEI, SH ;

ZUNGER, A .

PHYSICAL REVIEW B, 1988, 37 (03) :1342-1363

[17]

ZUNGER A, 1994, P ICPS 22, P1763

← 1 2 →