On improving the radiation resistance of gallium oxide for space applications

被引：29

作者：

Bauman, D. A. ^{[1
]}

Borodkin, A., I ^{[1
]}

Petrenko, A. A. ^{[1
]}

Panov, D., I ^{[1
]}

Kremleva, A., V ^{[1
]}

Spiridonov, V. A. ^{[1
]}

Zakgeim, D. A. ^{[1
,2
]}

Silnikov, M., V ^{[3
]}

Odnoblyudov, M. A. ^{[1
]}

Romanov, A. E. ^{[1
,2
]}

Bougrov, V. E. ^{[1
]}

机构：

[1] ITMO Univ, St Petersburg 197101, Russia

[2] Ioffe Phys Tech Inst RAS, St Petersburg 194021, Russia

[3] Special Mat Corp, St Petersburg 194044, Russia

来源：

ACTA ASTRONAUTICA | 2021年 / 180卷

基金：

俄罗斯科学基金会;

关键词：

Radiation resistance; Space applications; Gallium oxide; Czochralski method; Crystal growth; SOLAR-BLIND PHOTODETECTORS; SAFETY; IRRADIATION;

D O I：

10.1016/j.actaastro.2020.12.010

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

A method is proposed for increasing the radiation resistance of semiconductor crystals (AlxGa1-x)(2)O-3, which are promising for creating power electronics and optoelectronic devices for spacecraft performing tasks in near-earth orbits. The effect of the aluminum content on the bandgap in (AlxGa1-x)(2)O-3 single crystals grown from a melt by the Czochralski method is investigated. The necessary conditions for the formation of a high-quality seed and subsequent growth of single crystals are achieved by setting temperature gradients at each successive stage of growth. The results of energy-dispersive X-ray spectroscopy analysis and optical transmission spectra of (AlxGa1-x)(2)O-3 crystals with an aluminum content from 0 to 7.32% are presented. It is shown that an increase in the aluminum content leads to a monotonic increase in the bandgap from 4.7 eV to 5.0 eV, which provides an increase in radiation resistance.

引用

页码：125 / 129

页数：5

共 33 条

[1] The small orbital debris population and its impact on space activities and ecological safety [J].