Control of emission currents from silicon field emitter arrays using a built-in MOSFET

被引：45

作者：

Kanemaru, S

Hirano, T

Tanoue, H

Itoh, J

机构：

[1] Electrotechnical Laboratory, Ibaraki 305, 1-1-4 Umezono, Tsukuba

[2] Kobe Steel Ltd., Hyogo 651-22, 1-5-5 Takatsukadai, Nishi-ku, Kobe

来源：

APPLIED SURFACE SCIENCE | 1997年 / 111卷

关键词：

field emitter array; MOSFET-controlled field emitter; silicon; emission mechanism; carrier flow;

D O I：

10.1016/S0169-4332(96)00719-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the emission mechanism of p-type and n/p-type silicon field emitter arrays (FEAs) and have obtained the model for carrier flows, in which the emission current is limited by the supply of electrons both from the depletion layers near emitter tips and from the inversion layers under the gate electrodes. Based on this model, we have proposed and fabricated a new current-controllable silicon FEA incorporating a metal-oxide-semiconductor field-effect-transistor structure (MOSFET-structured silicon FEA). The fabricated device exhibits remarkable stability of emission currents, compared with the conventional n-type silicon FEA.

引用

页码：218 / 223

页数：6

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