Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration

被引：26

作者：

An, Chee-Hong ^{[1
]}

Lee, Myung Soo ^{[1
]}

Choi, Ju-Yun ^{[1
]}

Kim, Hyoungsub ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 26期

关键词：

atomic layer deposition; hafnium compounds; high-k dielectric thin films; leakage currents; Poole-Frenkel effect; ELECTRICAL-PROPERTIES; GATE; DIELECTRICS; HFO2;

D O I：

10.1063/1.3159625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin HfO2 and HfLaOx films with La/(Hf+La) ratios of 42%, 57%, and 64% were synthesized with an atomic layer deposition process. By measuring the leakage current at different temperatures, the conduction mechanism of HfO2 and HfLaOx films was shown to follow the Poole-Frenkel emission model under a gate injection condition. Based on the temperature and field-dependence measurements, the intrinsic trap energy levels were found to be 1.42, 1.34, 1.03, and 0.98 eV for the HfLaOx samples with La/(Hf+La) ratios of 0%, 42%, 57%, and 64%, respectively, showing a decreasing behavior as the La content increased.

引用

页数：3

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