Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

被引：2
作者：
Yakovlev, N. N. [1 ]
Almaev, A. V. [1 ,2 ]
Butenko, P. N. [1 ,3 ]
Mikhaylov, A. N. [4 ]
Pechnikov, A. I. [3 ]
Stepanov, S. I. [3 ]
Timashov, R. B. [3 ]
Chikiryaka, A. V. [3 ]
Nikolaev, V. I. [3 ,5 ]
机构：
[1] Tomsk State Univ, Tomsk, Russia
[2] Fokon LLC, Kaluga, Russia
[3] Ioffe Inst, St Petersburg, Russia
[4] Lobachevsky State Univ, Nizhnii Novgorod, Russia
[5] Perfect Crystals LLC, St Petersburg, Russia
来源：
MATERIALS PHYSICS AND MECHANICS | 2022年 / 48卷 / 03期
基金：
俄罗斯科学基金会;
关键词：
alpha-Ga2O3; halide vapor phase epitaxy; ion implantation; gas sensitivity; BEHAVIOR;
D O I：
10.18149/MPM.4832022_1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of Si+ ion irradiation of alpha-Ga2O3 at doses of 8 center dot 10(12) cm(-2), 8 center dot 10(14) cm(-2), and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of alpha-Ga2O3 layer grown by halide vapor phase epitaxy with implanted Si+ ions allows effective control of its sensitivity to H-2, response, and recovery times, as well as varying the operating temperatures. The maximum sensitivity to H-2 occurred for samples with Si+ ion irradiation dose of 8 center dot 10(12) cm(-2) at 400 degrees C. The mechanism of sensitivity of alpha-(GaO3)-O-2 epitaxial layers irradiated with Si+ to H-2 is discussed.
引用
收藏
页码：301 / 307
页数：7
相关论文
共 18 条
[1]   β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies [J].
Afzal, Adeel .
JOURNAL OF MATERIOMICS, 2019, 5 (04) :542-557
[2]   Hydrogen influence on electrical properties of Pt-contactedα-Ga2O3/ε-Ga2O3structures grown on patterned sapphire substrates [J].
Almaev, A., V ;
Nikolaev, V., I ;
Stepanov, S., I ;
Pechnikov, A., I ;
Chikiryaka, A., V ;
Yakovlev, N. N. ;
Kalygina, V. M. ;
Kopyev, V. V. ;
Chernikov, E., V .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (41)
[3]   Elements (Si, Sn, and Mg) doped α-Ga2O3: First-principles investigations and predictions [J].
Dong, Linpeng ;
Yu, Jiangang ;
Zhang, Yuming ;
Jia, Renxu .
COMPUTATIONAL MATERIALS SCIENCE, 2019, 156 :273-279
[4]   A model of the Temkin isotherm behavior for hydrogen adsorption at Pd-SiO2 interfaces [J].
Eriksson, M ;
Lundstrom, I ;
Ekedahl, LG .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :3143-3146
[5]   Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications [J].
Hou, Xiaohu ;
Zou, Yanni ;
Ding, Mengfan ;
Qin, Yuan ;
Zhang, Zhongfang ;
Ma, Xiaolan ;
Tan, Pengju ;
Yu, Shunjie ;
Zhou, Xuanzhe ;
Zhao, Xiaolong ;
Xu, Guangwei ;
Sun, Haiding ;
Lon, Shibing .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (04)
[6]   Hydrogen Sensing Characteristics of Pt Schottky Diodes on ((2)over-bar01) and (010) Ga2O3 Single Crystals [J].
Jang, Soohwan ;
Jung, Sunwoo ;
Kim, Jihyun ;
Ren, Fan ;
Pearton, Stephen J. ;
Baik, Kwang Hyeon .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (07) :Q3180-Q3182
[7]   A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique [J].
Kaneko, Kentaro ;
Fujita, Shizuo ;
Hitora, Toshimi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (02)
[8]   Enhancement of gas sensing by implantation of Sb-ions in SnO2 nanowires [J].
Kim, Jae-Hun ;
Mirzaei, Ali ;
Kim, Jin-Young ;
Lee, Jae-Hyoung ;
Kim, Hyoun Woo ;
Hishita, Shunich ;
Kim, Sang Sub .
SENSORS AND ACTUATORS B-CHEMICAL, 2020, 304
[9]   P-type Inversion at the Surface of β-Ga2O3 Epitaxial Layer Modified with Au Nanoparticles [J].
Krawczyk, Maciej ;
Korbutowicz, Ryszard ;
Szukiewicz, Rafal ;
Suchorska-Wozniak, Patrycja ;
Kuchowicz, Maciej ;
Teterycz, Helena .
SENSORS, 2022, 22 (03)
[10]   Selective Improvement of NO2 Gas Sensing Behavior in SnO2 Nanowires by Ion-Beam Irradiation [J].
Kwon, Yong Jung ;
Kang, Sung Yong ;
Wu, Ping ;
Peng, Yuan ;
Kim, Sang Sub ;
Kim, Hyoun Woo .
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (21) :13646-13658
12