CMOS Wafer Bonding for Back-Side Illuminated Image Sensors Fabrication

被引：5
作者：
Dragoi, V. [1 ]
Filbert, A. [1 ]
Zhu, S. [1 ]
Mittendorfer, G. [1 ]
机构：
[1] EV Grp, A-4782 St Florian Inn, Austria
来源：
2010 11TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP) | 2010年
关键词：
D O I：
10.1109/ICEPT.2010.5582379
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Backside illuminated CMOS image sensors were developed in order to encompass the pixel area limitation due to metal interconnects. In this technology the fully processed CMOS wafer is bonded to a blank carrier wafer and then back-thinned in order to open the photosensitive sensor area. The process flows of the two main competing wafer bonding technologies used for this manufacturing process (adhesive bonding and low temperature plasma activated direct wafer bonding with polymer layers) will be reviewed.
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页码：27 / 30
页数：4
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