Atomic layer growth on Al(111) by ion bombardment

被引：38

作者：

Busse, C ^{[1
]}

Hansen, H

Linke, U

Michely, T

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany

[2] Forschungszentrum Julich, IGV, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.85.326

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Instead of the expected erosion morphology composed of craters, rare gas ion bombardment of the, Al(111) surface is found to cause initial surface growth of several atomic layers. This phenomenon is observed for Ne+, Ar+. and Xe+ at all temperatures at which bombardment induces morphological surface changes and for ion energies down to a few hundred eV. Thr effect is interpreted on the basis of a thermal spike induced separation of damage into subsurface vacancy clusters and surface allatum clusters.

引用

页码：326 / 329

页数：4

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