Reconfigurable Writing Architecture for Reliable RRAM Operation in Wide Temperature Ranges

被引：10
作者：
Garcia-Redondo, Fernando [1 ]
Royer, Pablo [1 ]
Lopez-Vallejo, Marisa [1 ]
Aparicio, Hernan [1 ]
Ituero, Pablo [1 ]
Lopez-Barrio, Carlos A. [1 ]
机构：
[1] Tech Univ Madrid UPM, Madrid 28040, Spain
来源：
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2017年 / 25卷 / 04期
关键词：
Dynamic writing driver; memristor; reconfigurable; reliability; resistive RAM (RRAM); temperature; LOW-RESISTANCE-STATE; SPICE MODEL; ENDURANCE; CIRCUIT; 1T1R;
D O I：
10.1109/TVLSI.2016.2634083
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Resistive switching memories [resistive RAM (RRAM)] are an attractive alternative to nonvolatile storage and nonconventional computing systems, but their behavior strongly depends on the cell features, driver circuit, and working conditions. In particular, the circuit temperature and writing voltage schemes become critical issues, determining resistive switching memories performance. These dependencies usually force a design time tradeoff among reliability, device endurance, and power consumption, thereby imposing nonflexible functioning schemes and limiting the system performance. In this paper, we present a writing architecture that ensures the correct operation no matter the working temperature and allows the dynamic load of application-oriented writing profiles. Thus, taking advantage of more efficient configurations, the system can be dynamically adapted to overcome RRAM intrinsic challenges. Several profiles are analyzed regarding power consumption, temperature-variations protection, and operation speed, showing speedups near 700x compared with other published drivers.
引用
收藏
页码：1224 / 1235
页数：12
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