A Method for Obtaining the Real Off-State Breakdown Voltage of AlGaN/GaN MIS-HEMTs in On-Wafer Tests by Optimizing Protective Layer

被引：5

作者：

Gao, Sheng ^{[1
]}

Zhou, Quanbin ^{[1
]}

Li, Xianhui ^{[2
]}

Xie, Zijing ^{[2
]}

Wang, Hong ^{[1
,3
]}

机构：

[1] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China

[2] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China

[3] South China Univ Technol, Zhongshan Inst Modern Ind Technol, Zhongshan 528437, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

关键词：

MIS-HEMTs; on-wafer tests; protective layer; off-state breakdown voltage; critical breakdown field strength; ROD-PLANE GAPS; DIELECTRIC-BREAKDOWN; ELECTRICAL BREAKDOWN; IMPULSE BREAKDOWN; GAN HEMT; AIR; SUBSTRATE; NITROGEN; FIELDS; SF6;

D O I：

10.1109/JEDS.2019.2935323

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a method for testing the real off-state breakdown voltage (V-BD) of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMTs) in on-wafer tests. The method prevents the arcing over air at high voltage by depositing the protective layer between the pad electrodes of source and drain. The influence of materials and thickness of the protective layer on the high voltage tests of MIS-HEMTs were investigated. We found that it is helpful to obtain the real VBD of the devices by increasing the thickness of the protective layer and selecting a material with a higher critical breakdown field strength. The real VBD of the device with a gate-to-drain spacing of 25 mu m is 1164 V when 1.5 mu m SiO2 is deposited as the protective layer, which is 141% higher than that of the value tested in air.

引用

页码：902 / 907

页数：6

共 29 条

[1] High vertical breakdown strength with low specific on-resistance in AlGaN/AlN/GaN HEMTs on silicon [J].

Arulkumaran, S. ;

Vicknesh, S. ;

Ng, G. I. ;

Liu, Z. H. ;

Selvaraj, S. L. ;

Egawa, T. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (01) :37-39

[2]

Bin Lu, 2010, 2010 68th Annual Device Research Conference (DRC 2010), P193, DOI 10.1109/DRC.2010.5551907

[3]

Bychkov V., 2014, P 50 AIAA AER SCI M, P660, DOI [10.2514/6.2012-660, DOI 10.2514/6.2012-660]

[4]

[陈杰 Chen Jie], 2015, [高电压技术, High Voltage Engineering], V41, P2315

[5]

Cheng S, 2015, IEEE IND ELEC, P4796, DOI 10.1109/IECON.2015.7392850

[6]

Cookson A.H., 1981, P IEE A, V128, P303

[7] ELECTRICAL BREAKDOWN FOR UNIFORM FIELDS IN COMPRESSED GASES [J].

COOKSON, AH .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1970, 117 (01) :269-+

[8]

Darveniza M., 2002, P IEEE INT C PROP AP, V2, P615, DOI 10.1109/ICPADM.2000.876090

[9] Electric field breakdown at micrometre separations in air and nitrogen at atmospheric pressure [J].

Dhariwal, RS ;

Torres, JM ;

Desmulliez, MPY .

IEE PROCEEDINGS-SCIENCE MEASUREMENT AND TECHNOLOGY, 2000, 147 (05) :261-265

[10] IMPULSE BREAKDOWN OF POSITIVE ROD-PLANE GAPS IN HYDROGEN AND HYDROGEN-SF6 MIXTURES [J].

FARISH, O ;

DALE, SJ ;

SLETTEN, AM .

IEEE TRANSACTIONS ON POWER APPARATUS AND SYSTEMS, 1976, 95 (05) :1639-1647

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