Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas

被引：21

作者：

Won, Seok-Jun ^{[1
,2
,3
]}

Suh, Sungin ^{[1
,2
]}

Lee, Sang Woon ^{[1
,2
]}

Choi, Gyu-Jin ^{[1
,2
]}

Hwang, Cheol Seong ^{[1
,2
]}

Kim, Hyeong Joon ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Samsung Elect Co Ltd, Syst LSI Div, Adv Technol Dev Team, Yongin 449900, Kyungki, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 02期

关键词：

CHEMICAL-VAPOR-DEPOSITION; TIO2; THIN-FILMS; SUBSURFACE OXYGEN; RU; DIFFUSION; RU(0001);

D O I：

10.1149/1.3269901

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

TiO2 thin films were grown on Ru, Pt, Al2O3-passivated Ru, and Si substrates by plasma-enhanced atomic layer deposition at 280 C. The Ru-substrate-enhanced growth (similar to 3 times higher than that on Si at <100 cycles) was attributed to the electron donation and the diffusion of previously contained oxygen from Ru onto the growing surface. When the Al2O3 layer was interposed between the Ru substrate and TiO2 film, even as thin as 0.4 nm, the electron donation was largely suppressed. Above 16-20 nm, the growth rates of rutile TiO2 (on Ru) and anatase TiO2 (on Si) were 0.055 and 0.04 nm/cycle, respectively. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3269901] All rights reserved.

引用

页码：G13 / G16

页数：4

共 27 条

[1] The preparation and characterization of highly efficient titanium oxide-based photofunctional materials
Anpo, M
Dohshi, S
Kitano, M
Hu, Y
Takeuchi, M
Matsuoka, M
[J]. ANNUAL REVIEW OF MATERIALS RESEARCH, 2005, 35 : 1 - 27
[2] Identification of subsurface oxygen species created during oxidation of Ru(0001)
Blume, R
Niehus, H
Conrad, H
Böttcher, A
Aballe, L
Gregoratti, L
Barinov, A
Kiskinova, M
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (29) : 14052 - 14058
[3] Formation of subsurface oxygen at Ru(0001)
Böttcher, A
Niehus, H
[J]. JOURNAL OF CHEMICAL PHYSICS, 1999, 110 (06) : 3186 - 3195
[4] Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
Choi, Byung Joon
Choi, Seol
Eom, Taeyong
Ryu, Seung Wook
Cho, Deok-Yong
Heo, Jaeyeong
Kim, Hyeong Joon
Hwang, Cheol Seong
Kim, Yoon Jung
Hong, Suk Kyoung
[J]. CHEMISTRY OF MATERIALS, 2009, 21 (12) : 2386 - 2396
[5] Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
Choi, Gyu-Jin
Kim, Seong Keun
Won, Seok-Jun
Kim, Hyeong Joon
Hwang, Cheol Seong
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (09) : G138 - G143
[6] Diffusion-reaction modeling of silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon
Gopireddy, Deepthi
Takoudis, Christos G.
[J]. PHYSICAL REVIEW B, 2008, 77 (20)
[7] ISOTOPIC STUDY OF OXYGEN DIFFUSION IN SILICON DIOXIDE THIN-FILMS
GULINO, DA
KREN, LA
DEVER, TM
[J]. THIN SOLID FILMS, 1990, 188 (02) : 237 - 246
[8] Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor
Han, Jeong Hwan
Lee, Sang Woon
Choi, Gyu-Jin
Lee, Sang Young
Hwang, Cheol Seong
Dussarrat, Christian
Gatineau, Julien
[J]. CHEMISTRY OF MATERIALS, 2009, 21 (02) : 207 - 209
[9] Rutile-type TiO2 thin film for high-k gate insulator
Kadoshima, M
Hiratani, M
Shimamoto, Y
Torii, K
Miki, H
Kimura, S
Nabatame, T
[J]. THIN SOLID FILMS, 2003, 424 (02) : 224 - 228
[10] Thermodynamic calculations and metallorganic chemical vapor deposition of Ruthenium thin films using bis(ethyl-π-cyclopentadienyl)Ru for memory applications
Kang, SY
Choi, KH
Lee, SK
Hwang, CS
Kim, HJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (03) : 1161 - 1167

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