Application of selective area epitaxy for GaN devices

The paper presents the overview of selective area epitaxy (SAE) and epitaxial lateral overgrowth (ELO) techniques of nitrides by metalorganic vapour phase epitaxy (MOVPE) and hydride vapour phase epitaxy (HVPE) on patterned sapphire, SiC and Si substrates. These techniques which allowed precise control of the size and shape of overgrown material, were applied to defect reduction in GaN epitaxial layers and to fabrication of optical and electronic devices. The selective maskless growth of GaN on the top of Si tips without mask are also presented as an example of SAE techniques.