Identification of the hexavacancy in silicon with the B480 optical center

被引:40
作者
Hourahine, B [1 ]
Jones, R
Safonov, AN
Öberg, S
Briddon, PR
Estreicher, SK
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Univ Durham, Dept Phys, Durham DH1 3LE, England
[3] Univ Lulea, Dept Math, S-97187 Lulea, Sweden
[4] Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[5] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 19期
关键词
D O I
10.1103/PhysRevB.61.12594
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ring hexavacancy (V-6) has been found by previous theoretical modeling to be a particularly stable defect, but it has not been identified with any observed center to date. Here, we use ab initio calculations to derive the structure and properties of two forms of V6H2 and identify these defects with the trigonal optical centers B-41 and B-71(1), which are known to contain two hydrogen atoms in equivalent and inequivalent sites, respectively. It follows from the calculations that V-6 should also be optically active and we identify it with the B-80(4) (J line) center. This allows us to place the acceptor level of V-6 at E-c-0.04 eV.
引用
收藏
页码:12594 / 12597
页数:4
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