Study on the Direct Relationship between Macroscopic Electrical Parameters and Microscopic Channel Percolative Properties in Nanoscale MOSFETs

被引：0

作者：

Zhang, Zhe ^{[1
]}

Wang, Runsheng ^{[1
]}

Guo, Shaofeng ^{[1
]}

Wang, Yangyuan ^{[1
]}

Huang, Ru ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) | 2018年

关键词：

Percolation Path; Variability; Reliability; Characterization and Modeling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, based on the quantitatively characterized factor of channel current percolation path (PP), the local current fluctuations characteristics in device channel can be directly determined by I-V curves only, which links the microscopic PPs to macroscopic device electrical parameters. The results indicate that the newly defined "killer ratio" of PP is highly correlated with subthreshold swing degradation rate in both planar devices and FinFETs. It is also found that the current in PP area increases slower with V-g than the current in non-PP area, which is verified through TCAD and SPICE simulations. The explanation of the physical nature of correlated behavior sheds new light on understanding statistical variability and reliability in nanoscale devices.

引用

页码：80 / 82

页数：3