AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer

被引:9
作者
Chen, CH
Ibbetson, JP
Hu, EL
Mishra, UK
机构
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara
关键词
D O I
10.1063/1.119608
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have successfully used a thin layer (similar to 200 Angstrom) of annealed low-temperature GaAs (LT-GaAs) to reduce ion damage that would occur during the formation of a dry-etch gate recess of a high electron mobility transistor. Compared to structures without an ion damage blocking layer, the devices with a thin layer of LT-GaAs are more robust against ion damage. This is important for the application of ion-assisted processing to the fabrication of electronic devices, such as dry etching used to achieve gate recessing. (C) 1997 American Institute of Physics.
引用
收藏
页码:494 / 496
页数:3
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