Fabrication of Titanium-Doped Indium Oxide Films for Dye-Sensitized Solar Cell Application Using Reactive RF Magnetron Sputter Method

被引：32

作者：

Heo, Jong-Hyun ^{[1
]}

Jung, Ki-Young ^{[1
]}

Kwak, Dong-Joo ^{[1
]}

Lee, Don-Kyu ^{[2
]}

Sung, Youl-Moon ^{[1
]}

机构：

[1] Kyungsung Univ, Dept Elect & Elect Engn, Pusan 608736, South Korea

[2] Dong Eui Univ, Dept Elect Engn, Pusan 614714, South Korea

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2009年 / 37卷 / 08期

关键词：

Dye-sensitized solar cells (DSCs); RF magnetron sputtering; titanium-doped indium oxide (ITiO); transparent conductive oxide (TCO); TIO2; FILMS; PLASMA;

D O I：

10.1109/TPS.2009.2023477

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

To develop high-efficiency transparent conductive oxide glass in a longer wavelength zone for dye-sensitized solar cell (DSC) application, we fabricate titanium-doped indium oxide (ITiO) films on a soda-lime glass substrate by an RF magnetron sputtering. The ITiO films showed a minimum resistivity of 1.25 x 10(-3) Omega . cm. The transmittance increases from 80% at 450 nm to 90% at 700 nm in the visible spectrum. From the atomic force microscopy result, the surface roughness of the sample showed a change from 10 to 50 nm with annealing temperature. From the XPS result, the concentration ratio (%) for In, Ti, and O was 27 : 2 : 42. The annealing treatment on the ITiO films improves the photovoltaic characteristics of the ITiO-based DSCs, and energy conversion efficiency (eta) is 5.79% (FF: 0.62, V(oc): 0.71 V, J(sc): 13.23 mA/cm(2)) at 100-mW/cm(2) light intensity.

引用

页码：1586 / 1592

页数：7

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