Group IV mid-infrared photonics [Invited]

被引：37

作者：

Mashanovich, G. Z. ^{[1
,2
]}

Nedeljkovic, M. ^{[1
]}

Soler-Penades, J. ^{[1
]}

Qu, Z. ^{[1
]}

Cao, W. ^{[1
]}

Osman, A. ^{[1
]}

Wu, Y. ^{[1
]}

Stirling, C. J. ^{[1
]}

Qi, Y. ^{[1
]}

Xu-Cheng, Y. ^{[3
]}

Reid, L. ^{[1
]}

Littlejohns, C. G. ^{[1
,4
]}

Kang, J. ^{[5
]}

Zhao, Z. ^{[5
]}

Takenaka, M. ^{[5
]}

Li, T. ^{[6
]}

Zhou, Z. ^{[6
]}

Gardes, F. Y. ^{[1
]}

Thomson, D. J. ^{[1
]}

Reed, G. T. ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] Univ Belgrade, Sch Elect Engn, Belgrade 11120, Serbia

[3] Univ Southampton, Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

[4] Nanyang Technol Univ, Silicon Technol Ctr Excellence, Singapore 639798, Singapore

[5] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo 1130033, Japan

[6] Peking Univ, Sch Elect Engn & Comp Sci, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2018年 / 8卷 / 08期

基金：

新加坡国家研究基金会; 英国工程与自然科学研究理事会;

关键词：

SILICON WAVE-GUIDES; ALL-OPTICAL MODULATION; MU-M; INTEGRATED-CIRCUITS; WAVELENGTH RANGE; GERMANIUM; PLATFORM; SOI; PHOTODETECTORS; DEVICES;

D O I：

10.1364/OME.8.002276

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we review our recent results on group IV mid-infrared photonic devices. In particular, passive structures suitable for long wavelength operation. such as suspended Si. Ge-on-Si and suspended Ge, are analyzed. In addition, Ge-on-insulator waveguides have been characterized at 3.8 mu m. Several active devices have been also realized: optical modulators in silicon and germanium, and silicon and graphene detectors operating at shorter mid-IR wavelengths. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：2276 / 2286

页数：11

共 53 条

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