Sub-50 nm isolated line and trench width artifacts for CD metrology

被引：22

作者：

Tortonese, M ^{[1
]}

Lorusso, G ^{[1
]}

Blanquies, R ^{[1
]}

Prochazka, J ^{[1
]}

Grella, L ^{[1
]}

机构：

[1] VLSI Stand Inc, San Jose, CA 95134 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2 | 2004年 / 5375卷

关键词：

critical dimension; CD-SEM; CD-AFM; line edge roughness; line width roughness; LER; LWR;

D O I：

10.1117/12.536812

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a technique to produce isolated lines and trenches with arbitrary widths in the range of 12 nm to 500 nm. arbitrary heights and depths in the range of 100 nm to 2 mum, 90-degree sidewall angle, and top corner radii as small as 5 nm. These structures are ideal candidates as Critical Dimension (CD) absolute standards. The sidewall angle can further be varied to create an arbitrary sidewall angle that can be accurately measured.

引用

页码：647 / 656

页数：10

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