A multi-port current source model for multiple-input switching effects in CMOS library cells

被引:46
作者
Amin, Chirayu [1 ]
Kashyap, Chandramouli [1 ]
Menezes, Noel [1 ]
Killpack, Kip [1 ]
Chiprout, Eli [1 ]
机构
[1] Intel Corp, Strateg CAD Labs, Hillsboro, OR 97124 USA
来源
43RD DESIGN AUTOMATION CONFERENCE, PROCEEDINGS 2006 | 2006年
关键词
performance; verification; design; multiple input switching; current source model; timing analysis; cell library characterization; cell model; MCSM;
D O I
10.1109/DAC.2006.229209
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The problem of multiple-input switching (MIS) has been mostly ignored by the timing CAD community. Not modeling MIS for timing can result in as much as 100% error in stage delay and slew calculation. The impact is especially severe on stages immediately after a bank of flops, where the inputs have a high probability of arriving simultaneously. Other problems such as modeling of interconnect loads, complex (nonlinear/non-monotonic) input waveforms, power-droop impact on cell delay, nonlinear input capacitances, delay variations due to cross-capacitance, etc. are also known sources of error. In this paper, we introduce the multi-port current source model (MCSM). MCSM can efficiently handle an arbitrary number of simultaneously switching inputs, including single-input switching (SIS). Moreover, MCSM is comprehensive in that other modeling problems associated with delay and noise computation are elegantly covered. We demonstrate the applicability of MCSM on a large 65 nm industrial test-case. For cells experiencing MIS, the model yields delay and slew-rate errors within +/- 5% for 88.3% and 93.0% of the cases, respectively. We also present data that show that MCSM is an effective receiver model which captures active loading effects without incurring significant additional error. MCSM makes combined cell-level timing, noise, and power analysis a possibility.
引用
收藏
页码:247 / +
页数:2
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