Near-infrared intersubband absorption in (CdS/ZnSe)/BeTe type-II super-lattices grown on GaAs substrate by MBE

被引：2
作者：
Li, B. S. [1 ]
Akimoto, R. [1 ]
Akita, K. [1 ]
Hasama, T. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Ultrafast Photon Devices Lab, Tsukuba, Ibaraki 3058568, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 34卷 / 1-2期
基金：
日本学术振兴会;
关键词：
II-VI compounds; ISB-T; XRD; TEM;
D O I：
10.1016/j.physe.2006.03.073
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the dependence of absorption wavelength on the well width in the (CdS/ZnSe)/BeTe super-lattices(SL). With well-width reduction, the wavelength decreases from 1.795 to 1.57 mu m. Structural properties, strain state and interface composition are determined via XRD measurement. A (CdS/ZnSe)/BexMg1-xTe structure is prepared and XRD reveals the average lattice constant match to GaAs substrate. TEM reveals that numerous stacking faults exist in the (CdS/ZnSe)/BeTe structure, and stacking faults are completely suppressed in (CdS/ZnSe)/BexMg1-xTe SLs. Intersubband transition down to 1.535-1.55 mu m have been observed in SLs. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：276 / 279
页数：4
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